Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Kenichi Suzaki

Hirohisa Yamazaki

Takashi Ozaki

Yuji Takebayashi

Kazuki Nonomura

Takeshi Kasai

Takaaki Noda

Masakazu Shimada

Yoshimasa Nagatomi

Jie Wang

Gen Li

Yoshiro Hirose

Norikazu Mizuno

Yasunobu Koshi

Akihito Yoshino

Noriyuki Isobe

Toshiki Fujino

Atsushi Morikawa

Yuma Fujii

Yoshinori Baba

Yuma Ikeda

Yoshikazu Takashima

Tomoshi Taniyama

Seiyo Nakashima

Atsushi Hirano

Koichi Oikawa

Ryuichi Nakagawa

Yasunori Ejiri

Yoshitaka Kawahara

Yutaka Nishino

There is provided a technique that includes a reaction container configured to process a substrate; a cleaning gas supply system configured to supply a cleaning gas into the reaction container; a lid configured to be capable of closing an opening of the reaction container and made of a metallic material; a protector installed over a surface of the lid at a side facing an inside of the reaction container and including a surface composed of a first non-metallic material; an internal space formed between surfaces of the lid and the protector facing each other; and an inert gas supply system configured to supply an inert gas to the internal space in a state in which the opening is closed by the lid.

Substrate processing apparatus, cleaning method, and method of manufacturing semiconductor device

There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).

Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

There is provided a technique that includes: (a) lowering a temperature in a process chamber supplied with a cleaning gas containing a halogen element while being heated to a first temperature, from the first temperature to a second temperature equal to or lower than a temperature at which substrate processing is performed in the process chamber, while vacuum-exhausting an inside of the process chamber; and (b) after (a), supplying a gas containing a water vapor into the process chamber while vacuum-exhausting the inside of the process chamber, to cause the halogen element remaining in the process chamber to react with the water vapor.

Cleaning method, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: forming an oxide film containing a predetermined element on a surface of a substrate provided with a pattern formed thereon by repeatedly performing a cycle including: (a) forming a first layer containing the predetermined element by supplying a source gas containing the predetermined element from an outer periphery of the substrate toward the surface; and (b) forming an oxide layer containing the predetermined element by supplying an oxidizing gas from the outer periphery toward the surface, wherein (a) and (b) are performed non-simultaneously. A supply time of the oxidizing gas is selected such that a thickness distribution of the oxide film becomes a predetermined distribution.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a vessel in which a source is stored; a first heater capable of heating the source by immersion into the source stored in the vessel; a second heater capable of heating the vessel; a first temperature sensor capable of measuring a temperature of the source by immersion into the source; a second temperature sensor capable of measuring a temperature of the vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, processing apparatus and method of manufacturing semiconductor device

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Vaporizer, substrate processing apparatus and method for manufacturing semiconductor device

There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device

Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a liquid vessel in which a liquid source is stored; a first heater capable of heating the liquid source by immersion into the liquid source stored in the liquid vessel; a second heater capable of heating the liquid vessel; a first temperature sensor capable of measuring a temperature of the liquid source by immersion into the liquid source; a second temperature sensor capable of measuring a temperature of the liquid vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that includes a precursor vessel in which a liquid precursor is stored; a first heater immersed in the liquid precursor stored in the precursor vessel and configured to heat the liquid precursor; a second heater configured to heat the precursor vessel; a first temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; a second temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; and a controller configured to be capable of: controlling the first heater based on the temperature measured by the first temperature sensor; and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device

Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.

Substrate processing apparatus and precursor gas nozzle

There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

Substrate processing apparatus, liquid precursor replenishment system, and method of manufacturing semiconductor device

Gas supply nozzle

The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.

Substrate processing apparatus and method of manufacturing semiconductor device

A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

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Toyama, Japan

Kenichi Suzaki