Namiki Seimitsu Houseki Kabushiki Kaisha

Kenichi Shiroki

Takashi Fukuhara

Kenji Narita

Nobuo Imaizumi

Toshimichi Sato

Yoshihito Kasai

Provided is a Bi-substituted rare earth iron garnet single crystal which has a composition of RBiFeAO, wherein R denotes one or more rare earth elements among Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr while definitely including Gd, A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7&#x3c;x&#x2266;1.5, and 0&#x3c;w&#x2266;1.5, does not contain Pb and contains Pt, and additionally contains M which denotes Mn or at least one Group 2 element, wherein a coefficient &#x3b1; is set to any value within a numerical range of 0.815&#xb1;0.035 and &#x394; (which means (&#x3b1;&#xd7;[M])&#x2212;[Pt]) is set from &#x2212;0.40 atppm to 3.18 atppm.

Bi-substituted rare earth iron garnet single crystal, method of manufacturing the same, and optical device

A Bi-substituted rare earth iron garnet single crystal has a composition of R3-xBixFe5-wAwO12 (wherein R denotes one or more rare earth elements among Tb, Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr and inevitably include Tb; A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7&#x3c;x&#x2266;1.5, and 0&#x3c;w&#x2266;1.5), contains Pt and does not contain Pb, and additionally contains Mn or at least one Group 2 element, wherein the coefficient &#x3b1; is set at a value within a numerical range of 0.91&#xb1;0.05 and &#x394; (which means [M]&#x2212;(&#x3b1;&#xd7;[Pt])) is set from &#x2212;7.23 atppm to 1.64 atppm.

Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device

This invention has the polarizing function of polarizing an input beam and a non-reflecting function of suppressing reflection of the input beam, wherein at least one side of a light-transmissive substratehas a polarizing portionwith a striped structure formed by multiple alternating light-transmissive dielectric layers. . . and metallic film layers. . . . Its characteristics are improved if the metallic film layers are very thin and flat, with a target thickness in the range from 5 to 20 nm and variation of film thickness within the range of &#xb1;10%.

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Tokyo, Japan

Kenichi Shiroki