Canon Kabushiki Kaisha

Matsushita Electric Industrial Co., Ltd.

Agc Inc.

Sumitomo Metal Industries, Inc.

Nissan Motor Company Limited

Jfe Steel Corporation

Kansai Paint Company, Ltd.

Konica Minolta Opto, Inc.

Nec Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Asahi Glass Company, Limited

Hoya Corporation

Taiyo Yuden Co., Ltd.

Nippon Steel Sumitomo Metal Corporation

Kenichi Sasaki

Makoto Horiuchi

Makoto Kai

Tsuyoshi Ichibakase

Tomoyuki Seki

Daijiro Akagi

Mamoru Takeda

Shinichi Yamamoto

Ichiro Ishikawa

Yoshio Iwasa

Sumio Iida

Hiroaki Iwaoka

Shizuo Mori

Masaaki Yamashita

Yuya Nagata

Takashi Nakano

Hideki Kawai

Kazuhiko Matsuoka

Tatsuya Miyoshi

Akira Matsuzaki

Toshiyuki Uno

Naoto Yoshimi

Akihito Yamane

Hirotomo Kawahara

Takuma Kato

Kazuo Tanaka

Kazuhisa Okai

Shunya Taki

Takao Ooshima

Syoichi Tanaka

Hiroyuki Kato

Nobuaki Date

Kiyoshi Takahashi

Toshiaki Kurachi

Akira Mitsui

Yuriko Kaneko

Satoshi Kominami

Koichiro Nishikawa

Atsushi Hayashi

Takuji Oyama

Toyofumi Watanabe

Yoshiharu Sugimoto

Kouji Miyazaki

Otojiro Kida

Hiroyuki Ogata

Yoshinori Tanabe

Masaru Sagiyama

Takashi Anyashiki

Shinichiro Hataoka

Kazumichi Sashi

Chiyoko Tada

Nobue Fujibayashi

Hiroshi Iida

Tomofumi Shigekuni

Kouji Nakaike

Masahiro Murata

Nobuko Nakagawa

Hisashi Osaki

Eri Suzuki

Hiroyuki Iwamoto

Miho Sugiyama

Yasuhiro Toyoda

Keiji Yoshida

Toshiyuki Okuma

Hiromichi Takatsuka

Shinichiro Choji

Hiroaki Sawada

Atsushi Ito

Shin Aida

Kenichirou Takahashi

Tetsuzo Kosaka

Mitsutaka Konno

Yasuyuki Kajita

Keiichi Kotani

Syoetsu Sakamoto

Yohsio Matsuno

Mina Suzuki

Fujio Saito

Toru Watanabe

Yasuyoshi Katsuragawa

Shigeyuki Hayashi

Makoto Kawachi

Akibumi Mochizuki

Kazuhiko Ashizawa

Masakazu Horiye

Shigemi Sugino

Wataru Nishida

Tooru Egoshi

Katsuyoshi Tanaka

Mamoru Ehara

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θ range of 35° to 45° to an average value of an intensity of the diffracted light in a 2θ range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.

Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layerincluding ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3dor a peak of 4fof the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition<−0.150.16in an EUV region where n represents a refractive index and k represents an extinction coefficient.

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θrange of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2&#x3b8;: from 20&#xb0; to 50&#xb0; by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0&#xb0; or more.

A composite electronic component includes: a first electronic component including a ceramic body having a main surface caused to face a circuit board at a time of mounting and first and second end surfaces orthogonal to the main surface, and a first external electrode and a second external electrode respectively provided to the first end surface and the second end surface and respectively extending from the first end surface and the second end surface to the main surface; and a second electronic component including a functional film provided to the main surface, and a first electrode film and a second electrode film provided to both end portions of the functional film separately from the first external electrode and the second external electrode, the second electronic component being configured to fit within a thickness of each of the first external electrode and the second external electrode from the main surface.

Composite electronic component, composite electronic component package, circuit board, and method of producing a composite electronic component

An autofocus apparatus includes a control unit configured to set an offset amount based on information relating to a shape of a first high-frequency component of an image signal obtained by photoelectrically converting an object image formed by an image pickup optical system that includes a focus lens while driving the focus lens, and to move the focus lens to a position that shifts from a first position of the focus position by a sum of the offset amount and a predetermined amount that is determined by characteristic information of the image pickup optical system.

Autofocus apparatus and optical apparatus

A semi-organic insulation coating includes an inorganic component and an organic resin, a Zr compound and an Si compound contains a plate-like silica as an inorganic component and are included in a ratio in a dry coating of 20 to 70 mass % of Zr compound (converted to ZrO) and 10 to 50 mass % of Si compound containing plate-like silica (converted to SiO), and the remainder is substantially an organic resin, whereby a magnetic steel sheet with a semi-organic insulation coating has no deterioration of corrosion resistance and water resistance without containing a chromium compound and being excellent in powdering resistance, scratch resistance, sticking resistance, TIG weldability, punchability and coating appearance.

Magnetic steel sheet with semi-organic insulation coating

A computing unit computes a computed value for input data. A comparing unit compares the computed value of the computing unit with a computed value of another node which is included in an input/output set. An output unit outputs the computed value as output data of a node itself when the result of the comparison by the comparing unit shows that the computed value matches either one of computed values. When the computed value does not match any one of the computed values of other nodes, a transferring unit adds the computed value of the node itself to the input/output set, and transfers the input/output set to another node.

Redundancy device

Provided is an imaging apparatus that acquires an object distance to an object and focus position information for each of a plurality of divided areas of an imaging screen corresponding to an imaging area. The imaging apparatus acquires data of the amount of field curvature corresponding to the imaging distance and removes a field curvature component from the object distance and the defocus amount so as to determine a plurality of objects which is equi-spaced from the imaging apparatus and faces the imaging apparatus. When the plurality of objects is equi-spaced from the imaging apparatus and is arrayed so as to face the imaging apparatus, a focused position at which an error in the defocus amount on the entire imaging screen is minimized is calculated. If otherwise, a focusing reference area is selected and then a preferential focusing operation is performed for an object corresponding to the area.

Imaging apparatus and method for controlling same

Disclosed is a method for producing a glass substrate, which involves a first polishing step and a second polishing step both for polishing the surface of the glass substrate with a polishing solution containing a polishing agent. The method is characterized by additionally involving a heating step for heating the glass substrate, wherein the heating step is carried out after the first polishing step and before the second polishing step.

Method for producing glass substrate and method for producing magnetic recording medium

In an image sensor in which each microlens of a microlens array is disposed at a position corresponding to each pixel on a side to which light flux is incident, a layer formed of a member different from a member constituting the microlens array is disposed on the side of the microlens array to which light flux is incident, and a surface of the layer formed of the different member has a phase structure optically-opposite to that of the microlens array.

Image sensor and image capture apparatus

Growing community of inventors

Tokyo, Japan

Kenichi Sasaki