Sony Corporation

Kenichi Ookubo

Hideki Mori

Shigeru Kanematsu

Kazuyoshi Horie

Kuninori Shino

Hideki Yoshida

Yoichi Toriumi

A semiconductor device () according to the present invention comprises a vertical PNP bipolar transistor (), an NMOS transistor () and a PMOS transistor () that are of high dielectric strength, and a P-type semiconductor substrate, as shown in FIG.. A substrate isolation layer () of the PNP bipolar transistor (), a drain buried layer () of the NMOS transistor (), and a back gate buried layer () of the PMOS transistor () are formed simultaneously by selectively implanting N-type impurities, such as phosphorous, in the semiconductor substrate (). This invention greatly contributes to curtailing the processes of fabricating BiCMOS ICs and the like including vertical bipolar transistors with easily controllable performance characteristics, such as a current amplification factor, and MOS transistors with high dielectric strength and makes even more miniaturization of such ICs achievable.

Semiconductor device and method of fabricating same

A semiconductor device () according to the present invention comprises a vertical PNP bipolar transistor (), an NMOS transistor () and a PMOS transistor () that are of high dielectric strength, and a P-type semiconductor substrate, as shown in. A substrate isolation layer () of the PNP bipolar transistor (), a drain buried layer () of the NMOS transistor (), and a back gate buried layer () of the PMOS transistor () are formed simultaneously by selectively implanting N-type impurities, such as phosphorous, in the semiconductor substrate (). This invention greatly contributes to curtailing the processes of fabricating BiCMOS ICs and the like including vertical bipolar transistors with easily controllable performance characteristics, such as a current amplification factor, and MOS transistors with high dielectric strength and makes even more miniaturization of such ICs achievable.

Semiconductor device and its manufacturing method

An optical fiber connecting method and apparatus in which optical communication is performed in a uni-core bidirectional system as optical crosstalk is prevented from occurring. To this end, an optical fiber connector includes a refractive index matching member and an optical fiber connecting unit . The refractive index matching member has a refractive index substantially equivalent to that of the cores of optical fibers . The optical fiber connecting unit interconnects the optical fibers in a state in which end faces of the optical fibers are contacted with a refractive index matching member interposed between the end faces of the optical fibers

Optical fiber connecting device, electronic equipment, network system and optical fiber connecting method

An optical transmitter-receiver according to the present invention is an optical transmitter-receiver connected to an optical fiber used for a single-core two-way optical communication channel for making a first optical signal S to be sent incident upon the end of the optical fiber and receiving a second optical signal S sent via the optical fiber. The above optical transmitter-receiver is provided with emission means for emitting a first optical signal S an optical system for making a first optical signal S from the emission means incident upon the incident end of the optical fiber in a direction R different from a direction in which a second optical signal S is outgoing from the end of the optical fiber and light receiving means for receiving a second optical signal S outgoing from the end of the optical fiber.

Growing community of inventors

Kanagawa, Japan

Kenichi Ookubo