Fujitsu Corporation

Kenichi Oki

Kazuhiro Takahara

Kenichi Yanai

Tsutomu Tanaka

Tetsuya Hamada

Yasuyoshi Mishima

Shoshin Miura

Hisashi Yamaguchi

Tsutae Shinoda

Junichi Watanabe

Kazuo Yoshikawa

Toyoshi Kawada

Masayuki Wakitani

Koji Ohgata

Yoshio Nagahiro

Keizo Kurahashi

Teruhiko Ichimura

Tomotaka Matsumoto

Jun Inoue

Masahiro Okabe

Yoshinori Miyashita

Sei Sato

Tatsuya Kakehi

Mari Hodate

Hiroyuki Gondo

Yuji Murata

Kurahashi Keizo

In an active matrix-type display device where scan bus lines (S.sub.i) and data bus lines (D.sub.j) are formed on different substrates, two kinds of scan bus lines (SP.sub.i, SN.sub.i) are provided. A first switching element (TFTN.sub.ij) is connected between a reference voltage supply line (V.sub.R) and a display electrode (E.sub.ij), and is controlled by a first scan bus line (SN.sub.i), and a second switching element (TFTP.sub.ij) is connected between the reference voltage supply bus line (V.sub.R) and the display electrode, and is controlled by a second scan bus line (SP.sub.i). The first switching element (TFTN.sub.ij) is turned ON by a positive or negative potential at the first scan bus line.

High quality active matrix-type display device

A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.

Method for forming a film and method for manufacturing a thin film

An active matrix liquid crystal display apparatus comprises first and second substrates facing each other through a liquid crystal layer. The first substrate has a plurality of scan bus lines, thin film transistors, display electrodes, and reference potential supplying bus lines, and the second substrate has a plurality of stripe-like data bus lines that face the display electrodes. The display electrode has a compensation capacitor for compensating a potential fluctuation occurring in the display electrode after a gate electrode of the thin film transistor is selected. The capacitance of the compensation capacitor is larger during a compensation period than during a storage period in which the gate electrode of the corresponding thin film transistor is not selected.

Active matrix liquid crystal display with variable compensation capacitor

A thin-film EL display device incorporates a MOS active matrix. Each of the MOS transistor arrays is additionally provided in parallel with a Zener diode for the purpose of protecting the device from a high voltage. This Zener diode has a breakdown voltage characteristic corresponding to a difference between a luminous voltage and a non-luminous voltage of an EL display element and clamps the voltage across the MOS transistor, in the 'OFF' state, to a voltage less than or equal to non-recoverable breakdown voltage.

El display device

An AC memory driving type self-shift type gas discharge panel prevents accidental abnormal discharges caused by deviated abnormal charges. Abnormal charges are significantly accumulated at both ends of a shift channel consisting of a regular arrangement of a write discharge cell and shift discharge cells. Therefore, conductive layers are provided adjacent to at least both ends of the shift channel in order to dissipate the abormal charges.

Self-shift type gas discharge panel

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Machida, Japan

Kenichi Oki