Sandisk Technologies Inc.

Kenichi Okabe

Teruo Okina

Yusuke Yoshida

A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of at least one semiconductor material layer; memory openings vertically extending through the alternating stack; memory opening fill structures; a dielectric material portion contacting sidewalls of the insulating layers of the alternating stack. In one embodiment, a connection via structure can vertically extend through the dielectric material portion, and a metal plate can contact the connection via structure. Alternately or additionally, an integrated via and pad structure may be provided, which includes a conductive via portion vertically extending through the dielectric material portion and a conductive pad portion located on an end of the conductive via portion.

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Yokkaichi, Japan

Kenichi Okabe