Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Fujitsu Limtied

Fujitus Limited

Kenichi Okabe

Shiro Uriu

Yoshihiro Watanabe

Satoshi Kakuma

Sumie Morita

Hiroshi Nishida

Tomonari Yamamoto

Yoshiharu Kato

Hiroyuki Ohta

Masami Murayama

Naoki Matsuoka

Hiroshi Tomonaga

Takashi Hatano

Yoshihiro Uchida

Mikio Nakayama

Jun Itoh

Takashi Saiki

Yasuhiro Aso

Hidenobu Fukutome

Jin Abe

Naoyuki Izawa

Noriko Samejima

Eiji Ishioka

Shigeru Sekine

Youichi Momiyama

Satoshi Esaka

Miyuki Kawataka

Yoshiyuki Karakawa

Fumio Hirase

Hajime Wada

Yasuhiro Nishikawa

Shinichi Araya

Nobuyuki Tsutsui

Hiromi Yamanaka

Yoshihisa Tsuruta

Atsushi Kagawa

Atsuko Suzuki

Shouji Kohira

Kou Watanabe

Masakazu Sato

Kenichi Goto

Akiyoshi Hatada

Katsuaki Akama

Kenichi Kawarai

Katsuaki Ookoshi

Yuzo Okuyama

Tomohiro Kubo

Hiroshi Morioka

Masatoshi Fukuda

Hiroya Kawasaki

Ryouzi Takano

Kiyohumi Mitsuze

Masaki Kira

Takashi Tabu

Junichi Kawaguchi

Manabu Kojima

Ryo Takajitsuko

Masakatsu Nagata

Tetsuaki Wakabayashi

Yasusi Kobayasi

Hiroshi Ishiwata

Yasusi Kobayashi

Hiroko Yoshino

According to an aspect of an embodiment, a semiconductor device has a semiconductor substrate, a gate insulating film on the semiconductor substrate, a gate electrode formed on the gate insulating film, an impurity diffusion region formed in an area of the semiconductor substrate adjacent to the gate electrode to a first depth to the semiconductor substrate, the impurity diffusion region containing impurity, an inert substance containing region formed in the area of the semiconductor substrate to a second depth deeper than the first depth, the inert substance containing region containing an inert substance, and a diffusion suppressing region formed in the area of the semiconductor substrate to a third depth deeper than the second depth, the diffusion suppressing region containing a diffusion suppressing substance suppressing diffusion of the impurity.

Semiconductor device and method of manufacturing semiconductor device

The depletion of a gate electrode () is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (), with a gate insulating film () interposed between the gate electrode () and the semiconductor substrate (), and that, by irradiating a laser beam onto the gate electrode (), the introduced impurities are made to diffuse up to the interface between the gate electrode () and the gate insulating film ().

Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.

Method of manufacturing semiconductor device

A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.

A method for manufacturing a semiconductor device has the steps of: (a) implanting boron (B) ions into a semiconductor substrate; (b) implanting fluorine (F) or nitrogen (N) ions into the semiconductor device; (c) after the steps (a) and (b) are performed, executing first annealing with a heating time of 100 msec or shorter relative to a region of the semiconductor substrate into which ions were implanted; and (d) after the step (c) is performed, executing second annealing with a heating time longer than the heating time of the first annealing, relative to the region of the semiconductor substrate into which ions were implanted. The method for manufacturing a semiconductor device is provided which can dope boron (B) shallowly and at a high concentration.

Semiconductor device having shallow b-doped region and its manufacture

An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.

Method of suppressing diffusion in a semiconductor device

A switch station including an ATM switch; a memory storing control data for operations of the switch station; an intra-station device, accommodating a subscriber line, performing communication operation on subscriber ATM cell; a control processor generating control information in link access protocol (LAP) format; and an interface unit converting LAP control information into ATM cell to the intra-station device through the ATM switch, wherein the control information is communicated according to LAP, the intra-station device receives the control information and transmits a direct memory access request to obtain control data stored in the memory, the interface unit obtains and converts the data format of the control data into ATM cell to transmit to the intra-station device through the switch, and the intra-station device performs the communication operation on the subscriber ATM cell based on the control data received through the switch.

Intra-station control system for connectionless communications system

A communications apparatus for switching among different interfaces includes a switch unit. The switch unit includes a main switch for switching data of a fixed length and an interface having a first buffer for an input of the main switch and a second buffer for an output of the main switch.

Communications apparatus and congestion control method

Packets input from input HWs #to #to a packet switch device are buried in time slots A through D. The packet switch device alternately switches the input packets in units of time slots, and inputs the packets to two 4&#xd7;4 switches. The 4&#xd7;4 switches make normal switching, and distribute the packets to respective output ports. Then, the packets output from the two 4&#xd7;4 switches after being switched are alternately multiplexed, and output to output HWs #through #. By making switching in units of packets as described above, a process overhead is prevented from being increased, and also expansion can be easily made. Besides, hardware scale can be made small.

Packet switch device

Semiconductor device and method of fabricating the same

A switching apparatus that is used for high-speed large-capacity routing and a communication apparatus and communication system that are used for an efficient recursive multicast. A matrix switch performs self-routing on a packet on the basis of a tag including output route information set in the packet. Selectors are located so as to correspond to N output ports P#through P#N of the matrix switch and perform N-to-one selection control. Setting registers hold selection information used by the selectors to select a signal.

Switching apparatus, communication apparatus, and communication system

A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.

Method of manufacturing CMOS semiconductor device

A semiconductor device has first and second active regions defined on the principal surface of a silicon substrate, a first n-channel MOS transistor formed in the first active region and having first extension regions and first pocket regions being deeper than the first extension regions and being doped with indium at a first concentration, and a second n-channel MOS transistor formed in the second active region and having second extension regions and second pocket regions being deeper than the second extension regions and being doped with indium at a second concentration lower than the first concentration. Boron ions may be implanted into the second pocket regions. The pocket regions can be formed by implanting indium ions and an increase in leak current to be caused by indium implantation can be reduced.

Semiconductor device having pocket and manufacture thereof

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Kawasaki, Japan

Kenichi Okabe