Shin-etsu Chemical Co., Ltd.

Kenichi Oikawa

Tomohiro Kobayashi

Takayuki Fujiwara

Masaki Ohashi

Teppei Adachi

Koji Hasegawa

Masayoshi Sagehashi

Masahiro Fukushima

Shinya Yamashita

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Resist composition and patterning process

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.

An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Onium salt compound, chemically amplified resist composition and patterning process

A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Substrate protective film-forming composition and pattern forming process

A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided. 

A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

A photo acid generator represented (a), wherein Rand Reach independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms which may be substituted with or interposed by a heteroatom; Rrepresents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and Rand Rmay be mutually bonded to form a ring together with the sulfur atom in the formula. A photo acid generator can give a pattern excellent in resolution and LER and having a rectangular profile in the photolithography using a high energy beam like ArF excimer laser light, EUV, and electron beam as a light source.

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Joetsu, Japan

Kenichi Oikawa