Kabushiki Kaisha Toshiba

Kenichi Ohashi

Koji Asakawa

Akira Fujimoto

Hitoshi Sugiyama

Atsushi Inoue

Yasuhiko Akaike

Kenji Suzuki

Shunji Yoshitake

Yasuharu Sugawara

Junichi Tonotani

Koichi Takahashi

Shinji Nunotani

Atsuko Yamashita

Shuji Itonaga

Shoichi Washizuka

Katsumi Egashira

In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is &#x2153; to 9/10 of that of the bottom of the mesa portion.

Semiconductor light emitting device and method for manufacturing the same

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):  

Method of manufacturing semiconductor device, acid etching resistance material and copolymer

A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

Semiconductor light emitting device and semiconductor light emitting apparatus

A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device includes: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and extends from a first side face to a second side face opposing the first side face of the transparent substrate.

Method of manufacturing semiconductor device, acid etching resistant material and copolymer

A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

Light-emitting device and method for manufacturing the same

There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Method of manufacturing a semiconductor light-emitting element

A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure is formed into the following shape to change refractive index smoothly: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a block or graft copolymer comprising resin composition and forms a self-assembled microphase-separated structure; selectively removing at least one phase of the microphase-separated structure; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a plurality of semiconductor layers overlaid on the substrate, the semiconductor layers having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film, which is a side opposite to the substrate, wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film, the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface.

Growing community of inventors

Kawasaki, Japan

Kenichi Ohashi