Honda Giken Kogyo Kabushiki Kaisha

Honda Motor Co., Ltd.

Hitachi Astemo Ltd.

Shindengen Electric Manufacturing Company Limited

Kenichi Nonaka

Kenji Okamoto

Seiichi Yokoyama

Takeshi Kato

Hideki Hashimoto

Masaaki Abe

Koichi Nishikawa

Kazunari Kurokawa

Yuzuru Takashima

Yoshihiko Higashidani

Masaaki Shimizu

Yoshimitsu Saito

Kenji Oogushi

Kenichi Takebayashi

Yoshimitsu Saitou

This power conversion device includes a power module that has a plurality of power devices, and a circuit board that is connected to the power module, in which the circuit board has a drive circuit arrangement area in which a plurality of drive circuits for driving the plurality of power devices are disposed and a control circuit arrangement area in which a control circuit for controlling the drive circuit is disposed, and two drive circuit arrangement areas are provided with the control circuit arrangement area interposed therebetween.

Power conversion device

A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.

Method, tool, and apparatus for manufacturing a semiconductor device

Provided is a method of joining members having different thermal expansion coefficients, capable of joining them at a temperature lower than the melting point of Ag to obtain a joining layer having excellent durability to a thermal cycle. First Ag particleshaving an average particle diameter of 50 nm or less and an Ag foilor metal foilhaving a smaller modulus of longitudinal elasticity than that of Ag are placed between two types of membersandat least one of which has a lower thermal expansion coefficient than that of Ag, heated to join the membersand. A wax material, which is a powder mixture containing first Ag particles having an average particle diameter of 50 nm or less and second Ag particles or particles of a metal (having a modulus of longitudinal elasticity than that of Ag) having an average particle diameter of 20 &#x3bc;m or more and being contained in a volume fraction of 10 to 40% relative to a total volume of the powder mixture, is placed between the two types of membersand, heated to join the membersand. The metal foiland the particles of a metal have an Ag coating layer on a surface thereof. The first memberis formed of one type of material selected from the group consisting of Si, SiC, AlO, AlN and SiNand the second member is formed of Al or Cu.

Method of joining members having different thermal expansion coefficients

A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/&#xb0; C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.

Power semiconductor module

An object recognizing device for recognizing an object by transmitting laser light from a laser light source and receiving reflected light from the object by a light sensor, wherein the laser light source and the light sensor are disposed at a relative vertical distance of not less than 20 cm therebetween with a divergence angle .theta..sub.1 of the laser radiation emitted from the laser light source being set at a value of not more than 5 mrad and being smaller than an angle .alpha. formed between an optical axis of the laser light and an optical axis of the reflected light entering into the light sensor, and which is, therefore, capable of effectively recognizing any object even in an atmosphere containing aerosol, e.g., fog or haze.

Object recognizing device

A distance measuring system for measuring a distance between two objects has a transmitter assembly mounted on one of the two objects, for transmitting a plurality of electromagnetic waves having respective wavelengths different from each other at respective levels toward the other of the two objects, a receiver assembly mounted on the other object, for receiving the electromagnetic waves transmitted from the transmitting means, and a distance detector for detecting a ratio of levels at which at least one set of electromagnetic waves of the electromagnetic waves is received by the receiving means, as corresponding to a distance between the two objects, and determining the distance between the two objects from the ratio.

Distance measuring system

A static induction semiconductor device has a low-resistance drain region, a high-resistance layer disposed on the drain region, a low-resistance source region spaced from the high-resistance layer, a low-resistance gate region disposed in the high-resistance layer, and a hetero layer disposed in an interface between the high-resistance layer and the source region and an interface between the gate region and a surface protective layer on the gate and source regions. The hetero layer, which may be made of AlGaAs, has a band gap larger than a semiconductor crystal such as GaAs of the drain, source, and gate regions. The static induction semiconductor device has a low resistance turned on and can operate in a bipolar mode.

Growing community of inventors

Wako, Japan

Kenichi Nonaka