Nec Corporation

Nippon Telegraph and Telephone Corporation

Nintendo Co., Ltd.

Mitsubishi Paper Mills Limited

Kenichi Nishi

Junichi Fujikata

Daisuke Okamoto

Jun Ushida

Keishi Ohashi

Masayuki Mizuno

Masaru Kuramoto

Koichi Nose

Toru Tatsumi

Hiroshi Iwata

Akihito Tanabe

Seiichi Sumi

Tai Tsuchizawa

Kunihiro Nakagawa

Hiroyoshi Rangu

Yoshihiro Nanbu

Shoji Akaiwa

Seiichi Itabashi

Kenshiro Ueda

A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

Semiconductor light receiving element and optical communication device

In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)&#x3bb; to &#x3bb; [&#x3bb;: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than &#x3bb;/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Waveguide path coupling-type photodiode

A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Semiconductor device

Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chipand an optical interconnection chip. The optical interconnection chipincludes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chipincludes a transmission section(for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section(for instance, a bump) to electrically connect with the optical element.

Semiconductor optical interconnection device and semiconductor optical interconnection method

The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

SiGe photodiode

A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

Photodiode

A game apparatus includes a CPU, and in the game apparatus, letters are displayed as visual support for a sound generated by a message generating object. When a game message is displayed, a distance between the message generating object and a player object is calculated. Then, a form of the letters to be displayed on a billboard is changed depending upon the calculated distance. The form to be changed is, for example, transparency and a size of the letters. Thus, a game image in which the form of the letters is changed depending upon the distance between the player object and the message generating object is displayed.

Game apparatus, game message displaying method and storage medium storing game program

A light receiving circuit () includes a light inputting circuit () which converts one-system optical signal to be outputted from an optical transmission path () to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit () which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

Light receiving circuit and digital system

Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produced. The device has a recombination region and non-recombination region of carriers which have been separated spatially each other in the plane of the active layer.

II-VI compound semiconductor based light emitting device having

The object of the present invention is to provide a variable wavelength semiconductor laser which is large in ontinuous variable wavelength width, simple and convenient in structure, easy to produce, monolithic and small in size, and easy to handle. The variable wavelength semiconductor laser includes an optical gain region formed from two-dimensional or three-dimensional carrier confinement structures having sizes approximately of a thermal de Broglie wavelength whose size dispersion is controlled so that a gain spectrum covers a required variable wavelength region for generating and amplifying light when current is injected, a light absorption control region having a light absorption coefficient which varies depending upon a current injection amount, an optical resonator including the optical gain region and the light absorption control region, and control means for controlling current amounts or voltage values to be injected to the optical gain region and the light absorption control region.

Variable wavelength semiconductor laser

Disclosed is a silver halide photographic photosensitive material comprising a support and, provided thereon, at least one hydrophilic colloid layer including a photosensitive layer wherein the photosensitive layer comprises monodispersed silver halide grains having an average grain size of 0.2 micron or less and comprising at least 90 mol % of silver chloride, the photosensitive layer or a hydrophilic colloid layer provided on the same side of the support as the side on which the photosensitive layer is provided contains a hydrazine derivative, a hydrophilic colloid layer provided above the photosensitive layer contains a water-dispersible fine particle polymer, the photosensitive layer contains substantially no water-dispersible fine particle polymer, and amount of the water-dispersible fine particle polymer contained in the hydrophilic colloid layer is 1 g/m.sup.2 or less and is 5% by weight or more based on the weight of gelatin contained in the hydrophilic colloid layer.

Silver halide photographic photosensitive material

An optical modulator for varying intensity, frequency, phase and other information associated with input light in response to a voltage which is applied thereto from outside is disclosed. The modulator comprises a semiconductor substrate, at least one semiconductor ultrathin layer which is thinner than an order of electron mean free path, and electrodes capable of applying an electric field to said ultrathin layer in a perpendicular direction to the layers. The band gap of narrow band gap layers in the ultrathin layer is spatially varied with respect to the perpendicular direction to the layers. The band gap of the narrow band gap layers is monotonously varied in the perpendicular direction to the layers. The ultrathin layer is interposed between a p-type semiconductor and an n-type semiconductor with respect to the perpendicular direction to the layers, a band gap of semiconductor layers in the ultrathin layer and having a narrow band gap being sequentially narrowed toward the p-type semiconductor layer. The band gap of semiconductor layers in the ultrathin layer and having a narrow band gap is largest in the vicinity of the center and sequentially reduced toward opposite ends.

Growing community of inventors

Tokyo, Japan

Kenichi Nishi