Hitachi, Ltd.

Kenichi Natsui

Takashi Iga

Yasunori Ohno

Koukichi Ouhata

Ayumu Morita

Yukio Kurosawa

Toru Tanimizu

Masato Isogai

Isao Hashimoto

Tadashi Sato

Osamu Koyanagi

Noriyuki Sakudo

Takayoshi Seki

Terunori Warabisako

Satoshi Ichimura

Goro Daimon

Keiji Arimatsu

Kiyoshi Miyake

Yoshihito Asai

Katsuichi Kashimura

Kogi Ishikawa

Eisaku Mizufune

Yukio Nakagawa

A vacuum switch 1 includes a grounded vacuum vessel 2. The reliability of monitoring and measuring the vacuum pressure is improved by providing a vacuum pressure measuring terminal 30 at a side plane of the vacuum vessel 2 such that a main circuit 13 and the measuring terminal 30 are electrically separated from each other.

Vacuum insulated switching apparatus

A microwave plasma generator, wherein permanent magnets 3 forms intense magnetic field exceeding an intensity of electron cyclotron resonance magnetic field at microwave exit 6a of a dielectric body in an electron heating space chamber, the intensity of the magnetic field formed by the permanent magnet decreases rapidly to the zero at a point 14 in the vicinity of the boundary of the electronic heating space camber 1 and a plasma generating space chamber 2, and accordingly, most of electrons can be absorbed into electrons to heat and form high energy electrons at a position 12a-12c in electron cyclotron resonance layer 12.

Microwave plasma generator

A compression gas puffer type circuit breaker has a magnetic body surrounding a conductor between a stationary arc contact and a main bus conductor. The magnetic body is protected from being exposed to heated puffer gas generated when a movable arc contact is separated from the stationary arc contact by disposing an insulator partition plate supporting the conductor at the downstream end of a cylindrical contact base carrying a main stationary contact and upstream of the magnetic body. Conductors are disposed around the magnetic body so as to increase flux linkage with the magnetic body when an arcing current flows through the conductor during a circuit breaking operation.

Compression gas puffer type circuit breaker

A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.

Microwave-powered plasma-generating apparatus and method

A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions. The oxygen reacts with carbon or hydrocarbon gas which forms the reducing atmosphere to form carbon monoxide or carbon dioxide, which is evacuated. On the other hand, the aluminum is modified to aluminum nitride by the accelerated nitrogen ions or nitrogen particles. That is, the surface of the alumina substrate or alumina powder can be efficiently modifed at relatively low temperatures.

Method for surface modification and apparatus therefor

This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

Method and apparatus for forming a film

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Hitachi, Japan

Kenichi Natsui