Sumitomo Electric Industries, Limited

Kenichi Miyahara

Takayuki Nishiura

Shinya Fujiwara

Mitsutaka Tsubokura

An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550&#xb0; C. and the compound semiconductor substrate is 2&#xd7;10cmor less.

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Itami, Japan

Kenichi Miyahara