Sumitomo Electric Industries, Limited

Sumitomo Electric Hardmetal Corp.

Osaka Prefecture University Public Corporation

Kenichi Kurisu

Katsuhito Yoshida

Kenichi Watatani

Miki Miyanaga

Koichi Sogabe

Hideaki Awata

Keiji Fuse

Keiji Ebata

Hisao Kikuta

Tatsuya Kyotani

Hideaki Imamura

Fuminori Takeda

Koichi Matsuura

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Oxide sintered body and semiconductor device

An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 &#x3bc;m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.

Optical component and method for manufacturing same

At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.

Carbon dioxide laser light optical component

There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.

Method for manufacturing diffractive optical element

A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.

Dry etching method and diffractive optical element

The present invention provides a different optical element having superior optical characteristics. A polycrystalline substrate having crystal grains whose sizes are not more than 1 &mgr;m or an amorphous phase at the dry-etched surface thereof, or an upper film layer formed on a polycrystalline substrate being the same materials as that of the polycrystalline substrate , which has finer crystal grains than-those of the substrate. The upper film layer is dry etched, and AR coat is formed thereon.

Diffractive optical element

When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.

Etching method for ZnSe polycrystalline substrate

A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe crystal. This invention grows p-type ZnSe by an electrochemical deposition method. A zinc anode and a low-resistivity n-type ZnSe singlecrystalline substrate are immersed into a solution including zinc ions, selenium ions and acceptor ions. Direct current is sent from the zinc anode to the n-type ZnSe singlecrystalline substrate cathode. Selenium ions and zinc ions are attracted to the n-type ZnSe cathode. They are reduced and are deposited on the n-type ZnSe cathode. Deposited ZnSe film is a p-type semiconductor. A ZnSe semiconductor with a pn-junction is obtained.

Growing community of inventors

Osaka, Japan

Kenichi Kurisu