Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Toyoda Gosei Co., Ltd.

Kenichi Koya

Tomio Inoue

Yasuhiko Fukuda

Kenichi Sanada

Hidenori Kamei

Toshimasa Hayashi

Hideki Kokubu

Toshihide Maeda

Michio Miyawaki

Kunihiko Obara

Yoshirou Tooya

Isamu Yonekura

Toshirou Kitazono

Takahiro Shirahata

Koichi Nakahara

Yoshiyuki Ide

Kouji Nakatsu

Yukio Kishimoto

Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.

Semiconductor light-emitting device and manufacturing method of the same

In a light-emitting device including a base body portion which is configured by integrally forming a reflection case and a terminal holding portion provided at the rear portion of the reflection case and lead members to be inserted into the base body portion, portions of the lead members extracted outside of the base body portion are bent along the terminal holding portion to form a pair of connection portions to be connected to the pattern of a wiring board, respectively, a plurality of radiation plates are provided at the lead member. The plurality of the radiation plates are extracted from the same surface (lower surface) of the base body portion. Since the plurality of radiation plates are provided, at the time of being the radiation plates, the base body portion is prevented from being applied with an excessive force and the damage of the base body portion can be prevented.

Light-emitting device

A semiconductor light emitting device includes a mount member and a semiconductor light emitting element arranged on the mount member. The mount member includes a substrate; an electrode assembly (a positive electrode, a negative electrode, and bumps) that are arranged on a top surface of a substrate and contacts the semiconductor light emitting element. A reflecting member is out of contact with the semiconductor light emitting element and the electrode assembly. According to this structure, a semiconductor light emitting device can be provided, which efficiently outputs output light using a material having a high reflectance regardless of whether the material is appropriate for an electrode.

Semiconductor light emitting device, illuminating device, mobile communication device, camera, and manufacturing method therefor

A GaN-based LED element having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element formed in a silicon substrate. Electrical connections are provided via Au microbumps and between a p-side electrode of the GaN-based LED element and an n-side electrode of the Si diode element and between an n-side electrode of the GaN-based LED element and a p-side electrode of the Si diode element The Si diode element functions to protect the LED element from an electrostatic destruction. The Si diode element has a backside electrode connected to a leadframe . The p-side electrode of the Si diode element has a bonding pad portion connected to a leadframe via an Au wire

Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor

Semiconductor light-emitting device comprising an electrostatic protection element

A GaN-based LED element,having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element,formed in a silicon substrate. Electrical connections are provided via Au microbumps,and,between a p-side electrode,of the GaN-based LED element,and an n-side electrode,of the Si diode element,and between an n-side electrode,of the GaN-based LED element,and a p-side electrode,of the Si diode element,. The Si diode element,functions to protect the LED element,from an electrostatic destruction. The Si diode element,has a backside electrode,connected to a leadframe,. The p-side electrode,of the Si diode element,has a bonding pad portion,connected to a leadframe,via an Au wire

Growing community of inventors

Kagoshima, Japan

Kenichi Koya