Sharp Kabushiki Kaisha Corporation

Mitsubishi Gas Chemical Company, Inc.

Kymeta Corporation

Sharp Life Science (Eu) Limited

Sharp Life Science Corporation

Kenichi Kitoh

Wataru Nakamura

Fumitoshi Yasuo

Shinya Kadono Kadono

Hirohiko Nishiki

Takeshi Hara

Tetsunori Tanaka

Tomoko Teranishi

Hiromitsu Katsui

Junichi Inukai

Yukimine Shimada

Kiyoshi Minoura

Keiichi Tanaka

Yoshinori Tanaka

Tohru Okabe

Ryan Allan Stevenson

Yoshimasa Chikama

Hisao Ochi

Cagdas Varel

Tadashi Ohtake

Tomohiro Kosaka

Kazuki Kobayashi

Taketo Maruyama

Takatoshi Orui

Colin Stuart Short

Felix Chen

Satoshi Okabe

Steve Linn

Hao Li

Susumu Nakano

Tomoyuki Adaniya

Chihiro Tachino

Juxian Li

Manabu Daio

Toshiyuki Gotou

Shinya Kadono

A cell signal measurement electrode plate includes a first transistor including a gate terminal connected to a first selection line and a source terminal connected to a second selection line, a second transistor including a gate terminal connected to a drain terminal of the first transistor, a source terminal connected to an electrode, and a drain terminal connected to a common wiring line, and a first capacitor including one capacitance electrode connected to the drain terminal of the first transistor and another capacitance electrode connected to a capacitance element potential fixing wiring line.

Cell signal measurement electrode plate and information processing device provided with same

A scanning antenna includes a transmission and/or reception region including a plurality of antenna units and a non-transmission and/or reception region other than the transmission and/or reception region. The scanning antenna includes a TFT substrate, a slot substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, a seal portion provided in the non-transmission and/or reception region and surrounding the liquid crystal layer, and a reflective conductive plate disposed opposing a second main surface of a second dielectric substrate with a dielectric layer interposed between the reflective conductive plate and the second main surface. The slot electrode includes an opening or a recessed portion formed in the non-transmission and/or reception region and in the region surrounded by the seal portion.

Scanning antenna and method for manufacturing scanning antenna

A liquid crystal device includes a first substrate (TFT substrate) including a first dielectric substrate, a second substrate (slot substrate) including a second dielectric substrate, a liquid crystal layer provided between the first substrate and the second substrate and in all of an effective region and a portion of a non-effective region, a sealing seal portion configured to define the maximum value of the area of the liquid crystal layer when viewed from a normal direction of the first or second dielectric substrate, a cell gap control seal portion configured to define the minimum value of the thickness of the liquid crystal layer in the effective region, and a buffer portion provided in contact with the liquid crystal layer in the non-effective region and that deforms more easily due to external force than the first and second dielectric substrates in the effective region. The buffer portion includes a sheet and a joining section that joins the sheet and the first or second dielectric substrate. The sheet deforms more easily due to external force than the first and second dielectric substrates in the effective region, and/or at least a portion of the joining section deforms more easily due to external force than the cell gap control seal portion.

Scanned antenna and liquid crystal device

Provided is a microfluidic device that, as compared with a conventional microfluidic device, (i) is smoother in surface of a water-repellent layer provided above a segment electrode and (ii) makes it easier for microfluid provided in the surface of the water-repellent layer to slide. A microfluidic device () includes: an array substrate () including a plurality of electrodes (); and a counter substrate () including at least one electrode (), the array substrate () and the counter substrate () having therebetween an internal space () in which to cause an electroconductive droplet () to move across the plurality of electrodes (), and the plurality of electrodes () being provided on a first flattening resin layer () and each being a light-blocking metal electrode.

Microfluidic device

A scanning antenna includes a TFT substrate including a plurality of TFTs supported by a first dielectric substrate and a plurality of patch electrodes, a slot substrate including a slot electrode supported by a second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate disposed opposing the second dielectric substrate across a dielectric layer. The slot electrode includes a plurality of slots disposed corresponding to the plurality of patch electrodes, each patch electrode is connected to a drain of the corresponding TFT, the slot electrode includes Cu layers, and lower metal layers and/or an upper metal layer, and the lower metal layer and/or the upper metal layer decrease about a half or more of a tensile stress of the Cu layer.

Scanned antenna and method of manufacturing scanned antenna

A TFT substrate includes a dielectric substrate and a plurality of antenna unit regions arranged on the dielectric substrate. Each of the plurality of antenna unit regions has a TFT and a patch electrode electrically connected to the drain electrode of the TFT. The patch electrode includes a first electrode layer formed of the same conductive film as the gate electrode of the TFT and a second electrode layer formed of the same conductive film as the source electrode of the TFT.

TFT substrate, scanned antenna having TFT substrate, and method for manufacturing TFT substrate

A semiconductor device is provided with an oxide semiconductor thin-film transistor (TFT); a calibration electrode that is positioned so as to face an oxide semiconductor layer with an insulating layer therebetween, and, when viewed from the direction of the substrate normal line, overlaps at least part of a gate electrode with the oxide semiconductor layer interposed therebetween; and a calibration voltage setting circuit that determines the voltage to be applied to the calibration electrode. The calibration voltage setting circuit is provided with: a monitor TFT that is configured using a second oxide semiconductor layer, which is substantially the same as the oxide semiconductor layer of the oxide semiconductor TFT; a detection circuit that is configured so as to be able to measure the device characteristics of the monitor TFT; and a voltage determination circuit that determines the voltage to be applied to the calibration electrode on the basis of the measured device characteristics.

Semiconductor device and display device

An array board (a semiconductor device)includes a display area TFT (a display area transistor), a non-display area TFT (a non-display area transistor), an upper insulator, and a lower insulator. The display area TFTis arranged in a display area AA. The non-display area TFTis arranged in a non-display area NAA. The upper insulatoris arranged in the non-display area NAA and formed from a second interlayer insulation film. The lower insulatoris arranged in the non-display area and formed from a first interlayer insulation film. The lower insulatoris arranged below the upper insulatorsuch that they are layered.

Semiconductor display device comprising an upper and lower insulator arranged in a non-display area

This semiconductor device () includes: a substrate (); a thin-film transistor () which includes an oxide semiconductor layer () as its active layer; a protective layer () covering the thin-film transistor; a metal layer () interposed between the protective layer () and the substrate (); a transparent conductive layer () formed on the protective layer (); and a connecting portion () to electrically connect the metal layer () and the transparent conductive layer () together. The connecting portion () includes an oxide connecting layer () which is formed out of a same oxide film as a oxide semiconductor layer () and which has a lower electrical resistance than the oxide semiconductor layer (). The metal layer () is electrically connected to the transparent conductive layer () via the oxide connecting layer ().

Semiconductor device and method for manufacturing same

A drain electrode () includes (i) a lower drain electrode () stacked on a semiconductor layer () so as to partially cover an upper surface of the semiconductor layer () and (ii) an upper drain electrode (). The semiconductor layer (), the lower drain electrode (), and the upper drain electrode () form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode () and a periphery of the upper drain electrode () is more than 0.4 &#x3bc;m but less than 1.5 &#x3bc;m.

Active matrix substrate, display panel, and display device

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Etching liquid for a copper/titanium multilayer thin film

A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.

Wiring board, method for manufacturing same, display panel, and display device

Growing community of inventors

Osaka, Japan

Kenichi Kitoh