Fujitsu Corporation

Kenichi Kawashima

Yasushi Takahashi

Koichi Kobayashi

Hiroshi Yasuda

Akio Yamada

Kiichi Sakamoto

Kenji Nakagawa

Shuzo Oshio

Yoshihisa Oae

Junichi Kai

Yoshio Watanabe

Shunsuke Fueki

Nobuyuki Yasutake

Takayuki Miyazaki

Kenyu Uema

Jun-ichi Kai

A polishing apparatus includes a rotatable platen, a first driving device for causing the rotatable platen to rotate, a polishing head provided above the platen rotatably and holding a substrate in a manner such that the substrate faces the platen, a second driving device for causing the polishing head to rotate, an urging device for urging the substrate on the polishing head against the platen, a slurry feeding system for feeding a slurry to the platen, and a cleaning system for supplying a cleaning liquid containing an acid that dissolves a manganese oxide, to the polishing head. The cleaning system includes a nozzle provided in the polishing head for spraying the cleaning liquid to the platen.

Method of fabricating a semiconductor device using a CMP process

A reflection type photomask includes a substrate, and a reflecting surface formed on the substrate and including a first region and a second region which have a relative height difference. Due to the concavo-convex structure of the reflecting surface, a light reflected from the first region and a light reflected from the second region have a predetermined phase difference which may be used effectively to form a pattern on a photoresist layer.

Reflection type photomask and reflection type photolithography method

A charged particle beam exposure method includes the steps of (a) selectively irradiating a charged particle beam on at least one selected opening forming a selected pattern of a mask which includes a plurality of openings related to a plurality of kinds of patterns so as to shape a cross section of the charged particle beam which is transmitted through the selected opening, where the area of the mask is divided into a plurality of blocks each including at least one opening which is related to one pattern, and (b) irradiating the charged particle beam which is transmitted through the selected opening of the mask onto an object surface so as to expose a desired pattern corresponding to at least a part of the pattern of the selected opening on the object surface, where the step (a) carries out first and second deflections independently of each other with respect to the charged particle beam. The first deflection deflects the charged particle beam within a first deflection range which corresponds to the size of one block and the second deflection deflects the charged particle beam within a second irradiating range which covers a plurality of blocks of the mask, so that the second deflection deflects the charged particle beam to irradiate the selected opening out of the plurality of openings of the mask and the first deflection sets the first deflection range of the charged particle beam with respect to the selected opening.

Charged particle beam exposure method and apparatus

A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

Charged particle beam exposure system and charged particle beam exposure

Reflection type photomask with phase shifter

In an electron beam exposure system controlled by a computer, the system includes: an electron optical device for generating electron beams and irradiating the beams to a sample on a stage through a plurality of electron lens, a main deflection coil, and sub deflection electrodes, to form predetermined circuit patterns on the sample. The system also includes a position control device controlling the driving of the stage based on a stage position coordinate designated by the computer, detecting an actual stage position coordinate, and calculating an error value between the designated stage position coordinate and the actual stage position coordinate, the error value being divided into two components of an upper bits portion having an relatively large error value and a lower bits portion having a relatively small error value, and a deflection control device controlling the direction of the electron beams based on the main pattern data corrected by the upper bits portion and the sub pattern data corrected by the lower bits portion, and based on selected main and sub wait times determined by exposure and non-exposure timings.

Electron beam exposure system

A wafer having chips for determining the position of the wafer, at least one of the chips comprising a plurality of first-direction line groups formed on one side portion of the chip and a plurality of second-direction line groups formed on the other region of the chip, the first-direction line groups and the second-direction line groups being orthogonal to each other, each of the first-direction line groups comprising one first-direction main mark and one first-direction code mark expressing the position of the one first-direction main mark, each of the second-direction line groups comprising one second-direction main mark and one second-direction code mark, whereby, by scanning only one of the first-direction line groups and only one of the second-direction line groups by means of an electron beam, the position of the wafer is determined.

Wafer having chips for determining the position of the wafer by means of

A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.

Apparatus for processing negative photoresist

A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method, has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.

Method and apparatus for processing negative photoresist

A method of electron beam exposure for directly writing patterns on chips of a semiconductor wafer with an electron beam, in which each of the chips is sectioned into a plurality of exposure fields, and at least one alignment mark is formed in only one exposure field of eachg chip. The alignment of the entire wafer with the electron beam is preliminarily adjusted, the alignment of a particular chip with the electron beam is adjusted relying on the alignment mark on the chips, and the exposure fields of the desired chip are successively exposed to the electron beam so that the entire chip is exposed. The remaining chips are successively adjusted in alignment and exposed in the same manner as defined above, whereby the entire wafer is exposed.

Method of electron beam exposure

Electron beam exposure system provides a basic pattern data memory for storing data corresponding to the dimensions and the positions of patterns of a basic unit pattern which frequently appears as a unit in a pattern to be exposed on a wafer, and a central processing unit provided with an additional memory system which stores data corresponding to the position at which the basic unit pattern is to be exposed. This system determines the position of the basic unit pattern by adding data from the basic pattern data memory and data from the additional memory system through the central processing unit in accordance with a command of the central processing unit. Thereafter, data corresponding to the dimensions of the patterns in the basic unit patterns from the basic pattern data memory are sent as an input to a deflection system. As a result, the system according to the present invention applies electron beam deflection signals, which are produced by using the obtained data corresponding to the positions and the dimensions of the basic unit patterns, to the deflecting means of the electron beam exposure apparatus.

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Kawasaki, Japan

Kenichi Kawashima