Fujitsu Corporation

Adv Antest Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Heavy Industries Limited

Fujuitsu Limited

Kenichi Kawakami

Kiichi Sakamoto

Akio Yamada

Tatsuro Ohkawa

Hiroshi Yasuda

Yoshihisa Ooaeh

Tomohiko Abe

Takamasa Satoh

Katsuhiko Kobayashi

Satoru Yamazaki

Hitoshi Watanabe

Hidefumi Yabara

Hideki Nasuno

Isamu Seto

Masami Takigawa

Manabu Ohno

Tomohiro Sakazaki

Satoru Sagou

Akio Takemoto

Takayuki Kifuku

Atsushi Saito

Noriyuki Inoue

Masahiko Kurishige

Koichi Yamashita

Kenji Murakami

Takayuki Shimizu

Naoki Nishio

Yoshihisa Ooae

Jun Eto

Akihisa Okuda

Mitsuhiro Nakano

Akihito Suzuki

Kazushi Ishida

Akiyoshi Tsuda

Seiji Sakanishi

Kana Sakon

Kouji Fukusumi

Yukifumi Toyama

Junichiro Miyagaki

Kobayashi Katsuhiko

Masahiko Susa

Takumi Shinohara

The method for producing an assembly is a method for producing an assembly equipped with a member to be reinforced (), a reinforcing member body (), and a filler (), wherein the reinforcing member body () has a pair of flanges () arranged spaced on the surface (B) of the member to be reinforced (), a web (), and a connection portion () which connects the flanges () and the web () and forms a filler space (V) with the surface (B). The method for producing an assembly includes a step for inserting a filler () into the filler space (V), a step for attaching a crack control member () to cover the end of the filler (), a step for joining the flanges () and the member to be reinforced (), and a step for curing at least the member to be reinforced ().

Method for producing assembly, reinforcing member, and assembly

An identification is made of an abnormal condition in a motor due to an influence of a disturbance voltage, without addition of hardware, by estimating the disturbance voltage based on a target voltage and actual current flowing in the motor. An apparatus for detecting the abnormal condition of a motor in an electric power steering apparatus includes a motor current detecting unit for detecting an actual current flowing through the motor; a feedback controlling unit for feedback-controlling a target voltage value that gives the motor a driving command in accordance with the deviation of the actual current from an input target current; an abnormal voltage estimating unit for, based on the target voltage and the actual current, estimating an abnormal voltage estimation value corresponding to a voltage indicating an abnormal condition of the motor; and a motor abnormality judging unit for judging abnormality of the motor based on a comparison of the abnormal voltage estimation value with an abnormal voltage value previously stored.

Motor abnormality detecting apparatus

Disclosed are an electron-beam lithography method and system having precision in exposure improved by correcting a beam drift even within the same column of chips, and an electron-beam lithography system having the frequency of correcting a beam drift minimized without causing degradation of precision. In the electron-beam lithography method and electron-beam lithography system, a beam drift is measured frequently. When a beam drift is measured during exposure of each column of chips, a positional deviation is not corrected at the time but is corrected, step by step, while a plurality of stripes is defined. It is thus prevented that a misalignment between adjoining stripes gets larger. Moreover, a beam drift is measured a plurality of times in order to measure a variation in beam drift. If a beam drift is small, a measurement interval is extended. If a beam drift is large, the measurement interval is shortened.

Electron-beam lithography method and electron-beam lithography system

A method of producing mask data for partial one-shot transfer (block) exposure suitable for fabrication of an integrated circuit such as a system LSI in small numbers, in many models and with a short turnaround time (TAT) is disclosed, in which the ratio of the block mask fabrication cost to the total production cost and TAT are further reduced. In the partial one-shot transfer exposure method, at least a part of the pattern of the integrated circuit designed by at least partially combining a plurality of basic elements is passed through one of a plurality of block patterns of the block mask, and the radiation of the pattern shaped beams are combined for exposure. When producing the mask data related to the block mask used in this exposure method, a pattern group is generated in each layer of the integrated circuit including a plurality of basic elements, the degree of frequency at which each basic element in the integrated circuit is used is analyzed, and based on the analyzed degree of frequency at which each basic element is used, a plurality of block patterns to be used are selected from a pattern group, a mask layout is determined by determining the arrangement of the selected patterns in the block mask, each pattern of the mask layout is deformed based on the process conditions, and thus the mask data indicating the shape of a plurality of block patterns is generated, while at the same time generating auxiliary information containing the arrangement of a plurality of block patterns on the block mask.

Method of producing mask data for partial one-shot transfer exposure and exposure method

A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

Charged-particle-beam exposure device and charged-particle-beam exposure method

A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

Charged particle-beam exposure device and charged-particle-beam exposure

The present invention is a method of charged particle beam exposure wherein an area of an exposure pattern is exposed by irradiating a sample with a charged particle beam while moving said sample, comprising: a step of generating speed data including the speed distribution in a direction of movement of the sample in accordance with secondary data which is generated from a pattern data including at least data of the exposure pattern and data of an exposure position, and includes at least density information of the exposure pattern; and a step of irradiating the sample with the charged particle beam in accordance with the pattern data while being moved at variable speed in accordance with the speed data. According to the invention, the through-put is improved very much without any defect of the exposure.

Method and apparatus for charged particle beam exposure

Charged-particle-beam exposure device and charged-particle-beam exposure

The present invention is a charged particle beam exposure apparatus comprising: a column portion in which an optical system for a charged particle beam is disposed; a chamber to be coupled with the column portion; a movable sample stage located in the chamber for mounting a sample thereon; and a stage position measurement device, having an optical path for measurement, along which a laser beam having a predetermined frequency is projected and is reflected by reflection means provided on the sample stage, and an optical path for reference, which in length almost equals a distance between a starting point of the optical path for measurement and the origin of the optical system in the column portion and for which the length is increased at a rate substantially consistent with a thermal expansion coefficient as material of the chamber is expanded, for measuring a change in position of the sample stage by employing a laser optical signal for measurement, which passes along the optical path for measurement, and a reference laser signal, which passes along the optical path for reference.

Charged particle beam exposure apparatus

In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.

Charged particle beam exposure method and apparatus

Method of detecting a deficiency in a charged-particle-beam exposure mask

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Kawasaki, Japan

Kenichi Kawakami