Fujitsu Corporation

Kenichi Kado

Hirohisa Matsuki

Eiji Watanabe

Kazuyuki Imamura

Takahiro Yurino

Masanori Onodera

Kenichi Nagashige

Yutaka Makino

Joji Fujimori

Hiroyuki Yoda

Kunio Kodama

Minoru Nakada

A semiconductor device equipped with secondary pads having adequate arrangement for an arbitrary packaging process. The secondary pads are connected with the primary pads of the semiconductor device with a novel lead wire structure, which is characterized by its low electric resistance, good mechanical strength to protect active components of the device, good adhesion to bumps, and anti-electromigration property. The semiconductor device has: semiconductor circuit elements,embedded in a semiconductor substrate,; a plurality of conductive primary pads,each formed in a region above, and surrounding, the circuit element,; a first protective insulation substrate,covering the substrate and having first openings,for the primary pads,; lead wires,each consisting of a conductive bulk layer,made of copper and a metallic top layer,the bulk layer formed on the first protective insulation substrate,and having one end connected with a corresponding one of the primary pads,through an associated opening,and the other end located in a region surrounding the opening,, while the top layer made of a metal having Vickers hardness of more than 100; and a second protective insulation substrate,having second openings,for exposing the top surfaces of the other ends of the lead wires,serving as the secondary pads

Method for manufacturing semiconductor device with pad structure

A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

Semiconductor device with flip chip bonding pads and manufacture thereof

A semiconductor device equipped with secondary pads having adequate arrangement for an arbitrary packaging process. The secondary pads are connected with the primary pads of the semiconductor device with a novel lead wire structure, which is characterized by its low electric resistance, good mechanical strength to protect active components of the device, good adhesion to bumps, and anti-electromigration property. The semiconductor device has: semiconductor circuit elements 2 embedded in a semiconductor substrate 1; a plurality of conductive primary pads 4 each formed in a region above, and surrounding, the circuit element 2; a first protective insulation substrate 5 covering the substrate and having first openings 6 for the primary pads 4; lead wires 7 each consisting of a conductive bulk layer 15 made of copper and a metallic top layer 16, the bulk layer formed on the first protective insulation substrate 5 and having one end connected with a corresponding one of the primary pads 4 through an associated opening 6 and the other end located in a region surrounding the opening 6, while the top layer made of a metal having Vickers hardness of more than 100; and a second protective insulation substrate 8 having second openings 9 for exposing the top surfaces of the other ends of the lead wires 7 serving as the secondary pads 17.

Semiconductor device with pad structure

Growing community of inventors

Kunitachi, Japan

Kenichi Kado