Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Sumitomo Electric Industries, Limited

Toyobo Co., Ltd.

Kenichi Itou

Toshiyuki Fukuda

Noboru Takeuchi

Shigetoyo Kawakami

Masanori Minamio

Kei Hanafusa

Takemi Terao

Souichirou Okumura

Hiroaki Fujimoto

Hayato Fujita

Masayuki Oya

Noriyuki Yoshikawa

Yongrong Dong

Ryuichi Sahara

Yoshiyasu Kawagoe

Toshikatsu Enjoji

Masako Tatsuta

Masaru Kobayashi

Ryouhei Iwahara

Takahiro Matsumura

Hideki Sakota

A carbon electrode material is disclosed for a redox flow battery that particularly, even when using an Mn&#x2014;Ti type electrolyte, while stabilizing Mn ions and suppressing a rise in cell resistance during initial charge and discharge, has excellent oxidation resistance. The electrode material includes a carbonaceous fiber, and a carbonaceous material for binding the carbonaceous fiber, and satisfies the requirements: (1) when the size of a crystallite in a c axis direction found by X-ray diffraction in the carbonaceous material (B) is Lc(B), Lc(B) is 10 nm or greater; (2) when the size of the crystallite in the c axis direction found by X-ray diffraction in the carbonaceous fiber (A) is Lc(A), Lc(B)/Lc(A) is 1.0 or greater; and (3) the number of bonded oxygen atoms of the carbon electrode material surface is 1.0% or greater than the total number of carbon atoms of the carbon electrode material surface.

Carbon electrode material for redox flow battery, and manufacturing method thereof

Provided are a bipolar plate that can decrease the internal resistance of a flow battery, a redox flow battery, and a method for producing a bipolar plate. A bipolar plate sandwiched between a positive electrode in which a positive electrode electrolyte flows and a negative electrode in which a negative electrode electrolyte flows includes a positive-electrode-side surface in which a flow channel having a plurality of grooves through which the positive electrode electrolyte flows is provided and a negative-electrode-side surface in which a flow channel having a plurality of grooves through which the negative electrode electrolyte flows is provided. Each of the flow channels includes an inflow channel through which the electrolyte flows into the electrode and an outflow channel through which the electrolyte flows out of the electrode, the inflow channel and the outflow channel are not in communication with each other and are independent from each other, and the grooves each have a wide portion inside the groove, the wide portion having a width larger than a width of an opening of the groove.

Bipolar plate, redox flow battery, and method for producing bipolar plate

A redox flow battery having reduced internal resistance is provided. The redox flow battery includes a membrane, a bipolar plate, an electrode disposed between the membrane and the bipolar plate, an inlet port for supplying an electrolyte to the electrode, and an outlet port for discharging the electrolyte from the electrode, and performs a charge-discharge reaction by allowing the electrolyte to flow in the electrode. The electrode includes an anisotropic electrode layer having different permeabilities between a direction A1 on a plane of the electrode and a direction A2 orthogonal to the direction A1 on the plane of the electrode. In the anisotropic electrode layer, a permeability K1 in the direction A1 is larger than a permeability K2 in the direction A2. The electrode is disposed such that the direction A1 is substantially parallel to a main flow direction of the electrolyte in the electrode, the main flow direction being determined on the basis of a positional relationship between the inlet port and the outlet port and a shape of a surface of the bipolar plate on the electrode side.

Redox flow battery with anisotropic electrode layer

A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Semiconductor device

A semiconductor-element mounting substrate is a substrate for mounting a semiconductor element, and includes a substrate body. The substrate body has a mounting surface, and the center portion of the mounting surface is provided with a die pattern. Through conductors are provided in a portion of the substrate body located outside the die pattern to penetrate the substrate body in the thicknesswise direction. First terminals and second terminals are connected to the through conductors, respectively. The first terminals each extend toward the outer edge of the mounting surface, and they are electrically connected to the semiconductor element. The second terminals are provided on a surface of the substrate body opposite to the mounting surface.

Semiconductor-element mounting substrate, semiconductor device, and electronic equipment

A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

Semiconductor device, electronic apparatus comprising the same, and method for fabrication of substrate for semiconductor device used therein

There are provided a lead frame including a plurality of first external terminal portionsprovided on a plane, inner lead portionsformed of back surfaces of the respective first external terminal portions and arranged so as to surround a region inside the inner lead portions, and second external terminal portionsformed of uppermost surfaces of convex portions positioned outside the respective inner lead portions; a semiconductor elementflip-chip bonded to the inner lead portions via bumps; and an encapsulating resinencapsulating surroundings of the semiconductor element and the inner lead portions. The first external terminal portions are arranged in a lower surface region of the encapsulating resin along a periphery of the region, and the second external terminal portions are exposed on an upper surface of the encapsulating resin. A plurality of terminalsfor electrical connection are provided in a grid pattern in a region inside the first external terminal portions and exposed on a lower surface of the encapsulating resin. A plurality of semiconductor elements or coils and resistors can be incorporated, and further semiconductor devices can be stacked.

Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same

Growing community of inventors

Osaka, Japan

Kenichi Itou