National Institute of Advanced Industrial Science and Technology

Kenichi Ishii

Toshihiro Sekigawa

Eiichi Suzuki

Yongxun Liu

Meishoku Masahara

Upstanding thin-film channel regionshaving different heights are formed between source regionsand drain regionsof MOS transistors, respectively.

Semiconductor integrated circuit

A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.

Growing community of inventors

Tsukuba, Japan

Kenichi Ishii