Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Kenichi Ishiguro

Takashi Ozaki

Sadao Nakashima

Iwao Nakamura

Keigo Nishida

Tomoharu Shimada

Naoto Nakamura

There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber; a holder for sustaining the substrate in the process chamber; and a substrate transfer plate for transferring the substrate to the holder; wherein the holder has a retainer for sustaining the substrate at its outer periphery and a main body for sustaining the retainer, a portion of the retainer extending at least from a back region thereof with respect to an inserting direction of the substrate transfer plate to a region adjacent thereto and to be sustained by the main body and lying outer than the substrate upon putting the substrate on the retainer being made thicker than other portions of the retainer.

Substrate processing apparatus and semiconductor device manufacturing method

A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate supportis formed from a main body portionand a supporting portion. In the main body portion, a plurality of placing portionsextend parallel, and supporting portionsare provided on the placing portions. A substrateis placed on the supporting portion. The supporting portionhas a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portionis made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion

Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

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Toyama, Japan

Kenichi Ishiguro