Fujitsu Corporation

Sony Corporation

Anritsu Corporation

Kenichi Inoue

Osamu Tsuboi

Koichi Hashimoto

Kazuo Itabashi

Wataru Futo

Yuji Yokoyama

Hitoshi Suzuki

Naoya Sashida

Kaoru Saigoh

Satoru Mihara

Yukinobu Hikosaka

Yasutaka Ozaki

Jirou Miura

Tatsuya Yamazaki

Takeyasu Saito

Tatsuya Yokota

Hisashi Miyazawa

Koji Tani

Yoshinori Obata

Toshiaki Notsuyu

Takahide Ohtani

Kohtaroh Higuchi

Takashi Shimada

Takaji Ohtsu

Nobutoshi Otonari

Hidenobu Mochizuki

Hiroaki Iida

Hiroshi Hane

Jiro Yamaguchi

A mobile communication terminal test device includes: test signal transmitting means () for transmitting, to a mobile communication terminal (), a test signal including a plurality of radio resource regions (to) each of which is surrounded by one or more sub-frames and one or more resource blocks; and response signal receiving means () for receiving a response signal to the test signal from the mobile communication terminal. The test signal transmitting means transmits, to the mobile communication terminal, the test signal which includes one radio resource region for each predetermined time interval (T) and in which the position of the radio resource region in the frequency axis direction varies for each predetermined time interval.

Mobile communication terminal test device and mobile communication terminal test method

There is provided an electronic apparatus including a plurality of hard disk drives having a standby state and an active state as power application state. The electronic apparatus includes a drive setting portion to set each of the plurality of hard disk drives to a cache hard disk drive or a storage hard disk drive so as to use one hard disk drive in the active state as a cache hard disk drive and use a remaining hard disk drive as a storage hard disk drive, and a power control portion to control application of power to each of the hard disk drives according to setting by the drive setting portion.

Electronic apparatus, disk switching method and computer program

A fan control apparatus and method that sets a stop period constant at a starting time by adding a fan control in a time axis to a fan control by a temperature sensor. The fan control apparatus includes a temperature sensor that detects the temperature in the equipment body; and a CPU and a sub-microcomputer that has a temperature control function, that perform the control of the cooling fans according to the detected temperature value. The CPU performs a communication with a server connected to the equipment body via a network; and the sub-microcomputer performs the control of the cooling fans according to the time value based on the communication commencement.

Fan control apparatus and fan control method

A fan control apparatus and method to reduce the temperature in an equipment body by a time control when setting a stop period constant at the start by adding a time axis fan control by means of a temperature sensor. The fan control apparatus includes a temperature sensor that detects the temperature in the equipment body; a CPU and a sub-microcomputer perform the control of the cooling fans according to the detected temperature value. The CPU performs communication with a server connected to the equipment body via a network, and the CPU and sub-microcomputer perform the control of the cooling fans according to the time value based on a previous communication start and the present communication start.

A system for mounting a hard disk drive inside an electronic apparatus in such a way that the hard disk drive is isolated from vibration and noise and heat generated by the hard disk dive is radiated to a cover of the electronic apparatus to prevent overheating. A foam heat transmission sheet is placed between the hard disk drive cover and an outer casing that is mounted to the electronic apparatus and far-infrared ray transmitting and receiving sheets are attached to the outside of the outer casing and to the inside of the cover of the electronic apparatus to transmit heat from the hard disk drive to the exterior of the apparatus.

Electronic apparatus and hard disk drive housing apparatus

In a hard disk drive (HDD) or an electronic apparatus in which the HDD is wrapped with a foam resin sheet with a noise absorption effect and a metal outer casing to thereby damp noise, a sub-assembly wrapping body incorporating therein the HDD wrapped with a wrapping body composed of a slippery film sheet with foam resin sheets attached thereto is mounted into the metal outer casing through the slippery surface of the slippery film sheet. In order to insulate a noise generated from a recording and reproducing drive apparatus such as the HDD, the system for use with the HDD and the electronic apparatus can simplify the assembly process required when the HDD is loaded into the outer casing serving as a noise insulation box through a noise absorption member.

Hard disk drive housing apparatus and electronic apparatus

A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said semiconductor substrate. This transistor includes a pair of impurity diffusion regions and a gate electrode. Then forming a first insulating film over the first and second regions with this first insulating film covering the transistor in the first region. Thereafter, patterning the first insulating film to selectively remove the first insulating film in the second region. Then forming a second insulating film over the first and second regions. Thereafter, forming at least one contact hole through the second and first insulating film. The contact hole reaches one of the impurity diffusion regions. Finally, forming a conductive layer in the contact hole.

Method of manufacturing a semiconductor device with self-aligned contacts

A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

Semiconductor device with self-aligned contact and its manufacture

A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

Semiconductor device and method of manufacturing the same

A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.

Semiconductor device with perovskite capacitor and its manufacture method

A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.

A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second contact hole, on a (100) silicon semiconductor substrate; selectively forming a polysilicon layer extending from the first contact hole to the second contact hole, the polysilicon layer having a viahole within the first contact hole for selectively exposing the silicon semiconductor substrate; and selectively depositing a refractory metal (tungsten or molybdenum) layer on the polysilicon layer and an exposed portion of the substrate within the viahole by a selective CVD process, so that the SBD is formed between the exposed portion and the metal layer. The refractory metal layer is formed on the silicon of the exposed portion of the substrate and the polysilicon layer and is not formed on the insulating layer, and thus it is unnecessary to perform a photolithography process for patterning the refractory metal layer.

Growing community of inventors

Kawasaki, Japan

Kenichi Inoue