The Furukawa Electric Co., Ltd.

Tokyo Institute of Technology

Sanyo Electric Co., Ltd.

Other

Hitachi, Ltd.

Omron Corporation

Kokusai Denshin Denwa Kabushiki Kaisha

Research Development Corporation of Japan

Development Corporation of Japan

Kawaguchi Kogaku Sangyo

Kenichi Iga

Michinori Irikawa

Fumio Koyama

Akira Ibaraki

Toru Ishikawa

Kenji Kawashima

Kotaro Furusawa

Shigeyuki Akiba

Masayuki Iwase

Takaya Yamamoto

Kazuo Sakai

Jun Mizuno

Chuichi Ota

Nobuhiko Nishiyama

Kazuto Senda

Yasuharu Suematsu

Hiroyuki Uenohara

Yoshio Itaya

Kouji Yamamoto

Yoshihara Kuwabara

Yuzo Kawaguchi

Shinichi Katsura

Masanobu Kodaira

Shigehisa Arai

An optical fiber splicer includes a pair of retainers for retaining optical fibers to be spliced, a block formed with a groove of V-shaped cross-section, and abutment and pressure-contact mechanism for sliding terminal portions of the optical fibers in mutually opposite directions along the groove, producing substantially equal elastic forces in the terminal portions, bringing the terminal portions into abutment, and bringing the abutted terminal portions into pressure contact. An optical fiber splicing method includes a step of sliding terminal portions of optical fibers to be spliced along a groove of V-shaped cross-section in mutually opposite directions and producing substantially equal elastic forces in the terminal portions, and a step of bringing the terminal portions into abutment and then bringing the abutted terminal portions into pressure contact. An optical fiber splice structure includes terminal portions of optical, fibers spliced in a groove of V-shaped cross-section under pressure contact and exertion of substantially equal elastic forces.

Method and apparatus for optical fiber splicing

Surface-emitting laser

A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.

Field effect transistor loaded with multiquantum barrier

There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting incident carriers as waves �in phase conditions capable of allowing mutual enhancement of the incident and reflected waves!.

Multiquantum barrier Schottky junction device

Optical apparatus for controlling angle of divergence of ring beam

There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

Semiconductor device with current confinement structure

This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

Group II-VI material semiconductor optical device with strained

A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.

Semiconductor luminous element and superlattice structure

The present invention relates to a laser diode and a highly precise light information processor using the same, particularly a laser diode which controls the diameter of a current flowing through an active layer and changes the emitting area of the active layer, a laser printer which is suited to half tone expression with high image quality by using the above semiconductor laser device, and an optical disk device which can record data surely.

Laser diode of variable beam divergence and information processor using

A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.

Method of manufacturing a surface-emitting type semiconductor laser

A superlattice structure composed of at least two kinds of crystal layers, such as semiconductor layers, being different in bandgap, being combined alternately with each others, and the physical parameters of the layers being designed so that phase differences of reflected waves of injected electrons or holes are substantially equal to .pi. multiplied by an odd numbered integer so that the energy potential barrier height is effectively increased. When used in semiconductor lasers, it allows the confining efficiency of injected carriers to be noticeably improved.

Superlattice structure

A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.

Surface-emitting-type semiconductor laser device

A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

Semiconductor laser with buffer layer

Growing community of inventors

Machida, Japan

Kenichi Iga