Mitsubishi Denki Kabushiki Kaisha

Japan Atomic Energy Research Institute

Kenichi Honda

Hajime Akiyama

Katsumi Satoh

Kazuhiko Niwayama

Yousuke Morita

Masahito Yoshikawa

Takeshi Ohshima

A thyris a thyristor is provided in which a lifetime of a minority carrier is controlled to improve the trade-off relationship between an ON-state voltage and a turn-off time and attain a high frequency and a low loss. Shielding members formed of metal plates are provided respectively in spaces above a plane on which a cathode electrode is provided and a plane on which an anode electrode is provided.

Thyristor manufacturing method and thyristor

When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I.sub.10 to I.sub.30) which are responsive to junction capacitances (C.sub.10 to C.sub.30) of respective unit thyristors (ST.sub.1, ST.sub.2, MT) are generated. The displacement currents (I.sub.10 to I.sub.30) flow into a compensation electrode (C) through paths in a P base layer (2) having resistances (R.sub.10 to R.sub.30), and further flow to an external power source through the cathode electrode (K) which is short-circuited with the compensation electrode (C). The paths of the three displacement currents (I.sub.10 to I.sub.30) are separated from each other by resistances (R.sub.12, R.sub.23). Therefore, a forward bias voltage of a junction (D.sub.10) caused by the displacement current (I.sub.10) is attenuated by the displacement current (I.sub.20), while a forward bias voltage of a junction (D.sub.20) caused by the displacement current (I.sub.20) is attenuated by the displacement current (I.sub.30). Thus, it is possible to improve a thyristor of a multistage structure in dv/dt resistance, at no sacrifice of sensitivity.

Thyristor with improved dv/dt resistance

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Tokyo, Japan

Kenichi Honda