Mitsubishi Materials Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Mitsubishi Metal Corporation

Sharp Kabushiki Kaisha Corporation

Kenichi Hijikata

Rie Mori

Masashi Komabayashi

Hitoshi Maruyama

Kenji Ohta

Yoshiteru Murakami

Nobuyuki Takamori

Shozo Komiyama

Kunio Kuramochi

Takyuki Shingyoji

Katsuyuki Sato

Ryoko Furuhashi

Kazushige Takaishi

Tadashi Sugihara

Disclosed is a corrosion-resistant film for protecting the surfaces of Ag, which comprises an Ag--Mg alloy having an Mg content of from 1 to 10 atomic % and which is applied to an Ag substrate. Also disclosed is a corrosion-resistant composite structure composed of an Ag substrate and a protective film of an Ag--Mg alloy with an Mg content of from 1 to 10 atomic % formed on the surface of the Ag substrate. The corrosion-resistant film protects an Ag with a silver-white gloss from being blackened by sulfide components, etc. The adhesiveness between the film and the Ag substrate is good. The composite structure has a high reflectivity and is useful as a reflective film for photo-magnetic recording media, optical recording media, reflectors, illuminators, etc. The surface of the corrosion-resisting film is oxidized to form an MgO layer on the film, and the film exhibits a high protecting effect.

Corrosion-resistant film for protecting surfaces of Ag and

Silver is alloyed with magnesium, and the magnesium content of the silver-magnesium alloy ranges from 1 atom % to 10 atom % so that a protection film of magnesium oxide prevents the silver-magnesium alloy from sulfur and ozone without an intermetallic compound.

Magneto-optical recording medium having a refelecting layer of a

A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.

Low-permeability high-strength target material for the formation of thin

A target unit includes a backing plate and a target member disposed on the backing plate. The target member includes at least one erosion member of a sputtering material and at least one holding member for releasably holding the erosion member on the backing plate.

Target unit

A p-type Fe silicide thermoelectric conversion material comprises an Fe silicide, wherein at least one of Cr and V is substituted for part of Fe in the Fe silicide. The Fe silicide is chemically expressed as Fe.sub.1-x M.sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, and M represents the at least one of Cr and V. Alternatively, at least one of Cr and V, and Mn are substituted for part of Fe in the Fe silicide. In this case, the Fe silicide is chemically expressed as Fe.sub.1-x (M+Mn).sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, where M represents the at least one of Cr and V.

P-type Fe silicide thermoelectric conversion material

A thermoelectric element comprises a first layer of a p-type iron silicide, and a second layer of an n-type iron silicide. The first and second layers are joined together to form a pn junction therebetween. An insulating layer of an oxide is interposed between the first and second layers at portions thereof other than the pn junction. The oxide forming the insulating layer consists essentially of 38.0-50% by weight SiO.sub.2, 0.1-10.0% by weight B.sub.2 O.sub.3, and the balance of MgO and inevitable impurities. In manufacturing the thermoelectric element, one of a powder of the p-type iron silicide and a powder of the n-type iron silicide, a powder of the insulating layer-forming oxide, which may be in the form of a sheet, and the other of the powder of the p-type iron silicide and the powder of the n-type iron silicide are charged into a hot pressing mold in the mentioned order, whereby a laminated body is formed within the mold. The laminated body is hot pressed into a sintered body, which is then heated treated in the atmosphere.

Thermoelectric element and method of manufacturing same

A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material. The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together. The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.

Composite target material and process for producing the same

A novel target material for use in the sputter formation of a metal silicide film in electrode wiring in a semiconductor device, and a process for producing such target material are disclosed. The process for producing the target material is characterized by first impregnating molten silicon into a calcined body containing at least one silicide forming metal component and a silicon component and then forming a sintered body with a reduced oxygen content containing both a metal silicide and silicon. The target material prepared in accordance with the invention is extremely low not only in oxygen content but also in the concentrations of other impurities and has high deflective strength as compared with the conventional sintered target. The film formed by sputtering the target of the invention has appreciably reduced impurity levels and hence, very low electric resistivities. The target of the invention enables sputtering to be performed 5 times as fast as in the case using the conventional sintered target.

Growing community of inventors

Omiya, Japan

Kenichi Hijikata