Fujifilm Corporation

Kenichi Hayashi

Kaku Irisawa

Kazuhiro Noda

Fumito Nariyuki

Katsutoshi Yamane

Kiyoteru Miyake

A radiation detector is constituted by: a recording photoconductive layer; and electrodes provided on both sides of the photoconductive layer. Electric charges, which are generated within the recording photoconductive layer when radiation is irradiated thereon while a predetermined biasing voltage is being applied between the electrodes, are read out as electric signals. The recording photoconductive layer is formed by amorphous selenium that contains alkali metal elements within a range from 0.0007 atomic ppm to 0.0035 atomic ppm.

Radiation detector

A voltage applying electrode, to which a voltage is to be applied, a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and an electrode for detecting an electric signal in accordance with a radiation dose are overlaid one upon another. A hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer. The hole injection blocking layer contains an alloy of SbS, where x represents a number satisfying the condition of 41&#x2266;x&#x2266;60.

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Kanagawa-ken, Japan

Kenichi Hayashi