Spansion Llc.

Kenichi Fujii

Masahiko Higashi

Masatomi Okanishi

There are provided a semiconductor device and a fabrication method therefor including an ONO film () formed on a semiconductor substrate (), a word line () formed on the ONO film (), a bit line () formed in the semiconductor substrate (), and a conductive layer () that is in contact with the bit line (), runs in a length direction of the bit line (), and includes a polysilicon layer or a metal layer. In accordance with the present invention, a semiconductor device and a fabrication method therefor are provided wherein degradation of the writing and erasing characteristics and degradation of the transistor characteristics such as a junction leakage are suppressed, and the bit line resistance is decreased.

Fabrication method for semiconductor device having laminated electronic conductor on bit line

Semiconductor device having laminated electronic conductor on bit line

The present invention provides a semiconductor device and a method of manufacturing the semiconductor device, the semiconductor device including: ONO films that are formed on a semiconductor substrate and include trapping layers; word lines that are formed on the ONO films; and silicon oxide layers that are formed at portions on the semiconductor substrate, the portions being located between the word lines, the silicon oxide layers being located between the trapping layers.

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Aizuwakamatsu, Japan

Kenichi Fujii