Hitachi, Ltd.

Kenichi Aoki

Tomoyuki Tobita

Yoshimi Yamamoto

Yukio Takahashi

Ken Takahashi

Hideo Suzuki

Akira Sase

The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).

Semiconductor pressure sensor

A differential pressure sensor is disclosed, and in particular, there is disclosed a multiple function type differential pressure sensor capable of reducing a zero-point-change and a span change of means for detecting a differential pressure when applying a static pressure and being readily manufactured at high accuracy. The multiple function type differential pressure sensor is constructed by a semiconductor chip 1 for detecting a differential pressure, a fixing base 2 which has a joining part 21 joined to a thick part of the semiconductor chip 1 and which has a thickness less than or equal to that of the semiconductor chip 1, and also which has at least one thin part 22 in an outer periphery other than the joining part 21, and a housing 4 joined to the fixing base.

Differential pressure sensor capable of removing influence of static

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Katsuta, Japan

Kenichi Aoki