Denso Corporation

Nippondenso Co., Ltd.

Tohoku University

Anden Co., Ltd.

Kenichi Ao

Yoshimi Yoshino

Yasutoshi Suzuki

Yukihiro Takeuchi

Kazuhiko Kano

Hirofumi Uenoyama

Tsuyoshi Fukada

Seiichiro Ishio

Masakazu Kanosue

Minekazu Sakai

Minoru Murata

Tetsuo Fujii

Hiroshi Muto

Takamoto Watanabe

Yasuo Ando

Mikihiko Oogane

Toshikazu Arasuna

Takafumi Nakano

Toshimasa Yamamoto

Hirofumi Higuchi

Yoshinori Ohtsuka

Junji Oohara

Hiroki Noguchi

Norikazu Ohta

Hideya Yamadera

Hiroshige Sugito

Hirofumi Funahashi

Norio Kitao

Toshifumi Yano

Ichiro Izawa

Takamoto Furuichi

Kenichi Nara

Hajime Ito

Makoto Ito

Yasuaki Makino

Seiki Aoyama

Shinji Yoshihara

Seiji Fujino

Nobuyuki Kato

Koichi Sato

Yoshitaka Gotoh

Ryuichiro Abe

Keisuke Gotoh

Tomohito Kunda

Sumitomo Inomata

Hiroshi Yagyu

Ichiro Ito

Hiroshi Sakurai

Ryoichi Narita

Yasuki Shimoyama

Katsuhiko Ariga

Toshikazu Matsushita

Tatuya Kakehi

Ichiroh Izawa

Hideto Morimoto

Koji Eguchi

Motofumi Suzuki

Hiroshi Omi

Seiichiro Ishiou

A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Magnetic sensor and method for manufacturing said magnetic sensor

A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.

Magneto-resistance element and magnetic sensor using the same

A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm].

Magnetic sensor

A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Dynamic quantity sensor device and manufacturing method of the same

In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.

Angular velocity sensor

A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Method for manufacturing magnetic sensor apparatus

Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same

A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Semiconductor sensor

A physical quantity sensor includes: a substrate; an angular speed sensor disposed on the substrate; and an acceleration sensor disposed on the substrate. The angular speed sensor includes an oscillator capable of oscillating by a driving force and displaceable in accordance with a Coriolis force attributed to an angular speed of the oscillator. The acceleration sensor includes a movable portion displaceable in accordance with an acceleration applied to the acceleration sensor. The oscillator has a driving direction, which is not parallel to a displacement direction of the movable portion. The physical quantity sensor having the angular speed sensor and the acceleration sensor detects both of the angular speed and the acceleration with high accuracy.

Physical quantity sensor having angular speed sensor and acceleration sensor

The magnetic sensor is fabricated such that a magnetic sensor chip, having a one-chip structure in which MRE bridges and a comparator are included, is mounted onto a lead frame using an adhesive material, and then the magnetic sensor chip mounted on the lead frame is encapsulated by molding in a molded material. The magnetic sensor includes a magnetic-field generating portion formed by magnetizing at least one of the chip mounting member, the adhesive material, and the encapsulating material.

A vibratory angular rate sensor comprises a vibrator having a vibrating element arranged to oscillate along a first direction, the element being arranged to further oscillate along a second direction perpendicular to the first direction when subjected to angular rate about a third direction perpendicular to the first and second directions. The vibrating element is caused to oscillate at a predetermined frequency along the first direction. An oscillation detector generates a voltage representing oscillations of the vibrating element along the second direction. A first synchronous detector synchronously detects a primary frequency component of the generated voltage using clock pulses of the predetermined frequency to produce an output signal. A second synchronous detector synchronously detects an odd-numbered harmonic of the generated voltage using clock pulses of the odd-numbered harmonic frequency. A residual odd-numbered harmonic component contained in the output signal of the first synchronous detector is cancelled with the detected odd-numbered harmonic.

Vibratory angular rate sensor

A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

Method of manufacturing semiconductor device capable of sensing dynamic quantity

Semiconductor device having a moveable member therein and a protective member disposed thereon

An oscillatory angular rate sensor unit includes a mount base and a sensor element installed on the mount base. The sensor element includes an oscillator which produces angular velocity-caused oscillations in a first direction when the sensor element experiences angular motion during self-excited oscillation of the oscillator in a second direction opposite the first direction. A resonant frequency of the sensor unit in the first direction is set to a value less than or equal to a reciprocal of square root of two times a difference between resonant frequencies of the oscillator in the first and second directions, thereby eliminating an error output caused by undesirable acceleration acting on the sensor unit.

Oscillatory angular rate sensor

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Tokai, Japan

Kenichi Ao