Mitsubishi Heavy Industries Limited

Nec Corporation

Nec Solution Innovators, Ltd.

Mitsubishi Heavy Industries Machinery Systems, Ltd.

Akita University

Kengo Yamaguchi

Satoshi Sakai

Akemi Takano

Yasuyuki Kobayashi

Yasuoki Tomita

Toshio Abe

Minoru Ohara

Tatsuya Kimura

Taiji Torigoe

Ikuo Okada

Koji Takahashi

Sunao Aoki

Masahiko Mega

Kiyoka Takagi

Yoshiaki Takeuchi

Tatsufumi Aoi

Shoichi Aoki

Nobuyuki Kamihara

Shigenori Tsuruga

Saneyuki Goya

Hideaki Kaneko

Ryuichi Matsuda

Yoshitaka Uemura

Kohei Kawazoe

Kouji Takahashi

Kazuya Sugimoto

Hirofumi Shimizu

Mikio Muraoka

Shigehiro Shiozaki

Takuya Yamazaki

Hirokazu Kawano

Takuya Abe

Akio Ikeda

Hiroomi Miyahara

Ken Fujita

Toshihiko Tsunatani

Osamu Yamamoto

Masaya Kanikawa

Youji Nakano

Kotaro Ohshima

Syuho Tsubota

A sheet drying device and method, and a box making machine, wherein provided are: a heating lamp () that is disposed facing a printing face of a cardboard sheet (S); a voltage adjusting unit () that adjusts the voltage of electrical power supplied to the heating lamp (); a voltage setting unit () that sets the working voltage of the heating lamp () by increasing or decreasing a reference voltage according to the thickness of a water-based paint on the cardboard sheet (S), where the reference voltage is a voltage that is less than the rated voltage of the heating lamp () by a preset prescribed value; and a controlling device () that changes the voltage of the heating lamp () to the working voltage set by the voltage setting unit () using the voltage adjusting unit ().

Sheet drying device and method, and box making machine

A plasma generation apparatus, and a plasma thruster configured to use the plasma generation apparatus are disclosed. The plasma generation apparatus includes a discharge vessel, a light-emitting monitor, a probe measuring instrument, a control device, and an optical axis driving unit. The discharge vessel is configured to ionize gas which is introduced to an inside thereof so as to generate plasma. The light-emitting monitor is configured to measure electron density of the plasma by emission spectra of the plasma. The probe measuring instrument is configured to measure the electron density of the plasma by a probe in the discharge vessel.

Plasma generation apparatus including measurement device and plasma thruster

A related information presentation device is designed to communicate client terminals so as to search and present users with useful content information unanticipated by users with reference to a plurality of indirectly related content information which is not directly related to each other but which is assumed to be indirectly related to each other through the same relevant content information. Upon receiving a search expression input by each user of a client terminal, the related information presentation device searches specific content information so as to automatically extract indirectly related content information, correlated to the specific content information, from among a plurality of indirectly related content information. Subsequently, the related information presentation device generates display data representing a graph connecting between a node representing the specific content information and a node representing the indirectly related content information via an edge, thus transmitting the display data to the client terminal.

Photovoltaic device and process for producing photovoltaic device

Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by ZnMgO (0.096&#x2266;x&#x2266;0.183).

Photoelectric conversion device

An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer () that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element. The computer () has a haze ratio characteristic made by associating the haze ratio and the light intensity of the diffused transmitted light and obtains a haze ratio by using the haze ratio characteristic and the light intensity received by the light receiving element.

Thin-film inspection apparatus and inspection method

A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.

Thin-film inspection apparatus and method therefor

A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.5% and not more than 20% of the total deposition time for the i-layer, and with the SiH* emission intensity during the initial layer deposition stage not, more than 80% of the stabilized SiH* emission intensity during the bulk i-layer deposition stage.

Process for producing photovoltaic device and deposition apparatus

Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

Photoelectric conversion device fabrication method

An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.

Resistivity testing method and device therefor

The present invention relates to a method of repairing a Ni-based alloy part having an undercoat layer and a topcoat layer stacked on a Ni-based alloy base when the topcoat layer is damaged, comprising the steps of removing a peeled-off portion of the damaged topcoat layer and a denatured portion of the undercoat layer corresponding to the peeled-off portion, forming another undercoat layer by applying spraying to an opening portion of the undercoat layer in the atmosphere at a spray particle speed of 300 m/s or more and a base-material temperature of 300&#xb0; C. or less, and forming another topcoat layer in the peeled-off portion of the topcoat layer

Method of repairing a Ni-base alloy part

A tip plug is capped on a boss section so as to fit to a hole which is used for detaching a core which is formed in a blade tip section of the gas turbine blade. A butt-section T is melted so as to form a butt-welding section by using a YAG laser beam. Also, parameters such as an interval between the butt-section T, a member for forming the tip plug, condition for a laser welding operation, and a defocus position of the laser beam are optimized.

Method of closing a hole in a gas turbine blade top by laser welding

The present invention provides a turbine moving blade, a turbine stationary blade, and a turbine split ring which are capable of restraining the deterioration and peeling-off of a thermal barrier coating easily and surely, and a gas turbine capable of enhancing the energy efficiency by increasing the temperature of combustion gas. The turbine moving blade provided in a turbine constituting the gas turbine includes a platform having a gas path surface extending in the combustion gas flow direction, and a blade portion erecting on the platform. The thermal barrier coating covering the gas path surface is formed so as to go around from the gas path surface to an upstream-side end face and a downstream-side end face of the outer peripheral faces of the platform.

Turbine moving blade, turbine stationary blade, turbine split ring, and gas turbine

Growing community of inventors

Nagasaki, Japan

Kengo Yamaguchi