Kabushiki Kaisha Toshiba

Kengo Uchida

Shiori Kaji

Kei Masunishi

Yasushi Tomizawa

Hiroki Hiraga

Etsuji Ogawa

Fumito Miyazaki

Ryunosuke Gando

Daiki Ono

Kazuyuki Higashi

Atsuko Sakata

Satoshi Wakatsuki

Mitsuyoshi Endo

Daki Ono

Hideaki Murase

According to one embodiment, a sensor includes a base body, a support portion fixed to the base body, and a first member supported by the support portion. A gap is provided between the base body and a part of the first member. The first member includes a supported region, a first movable region, a first structure, a first support structure, a first connection structure, a first connect portion, and a first beam. The support portion is located between the base body and the supported region in a first direction from the base body to the support portion. The first beam extends along a second direction crossing the first direction. A first beam position of the first beam is located between a first movable region position of the first movable region and a support portion position of the support portion in the second direction.

Sensor and electronic device

According to one embodiment, a sensor includes a stage, a driver, and a detector. The stage includes a first portion and a second portion. The driver is configured to rotate the stage. A rotation axis of the stage passes through the first portion and is along a first direction. A second direction from the first portion to the second portion crosses the first direction. The second portion is configured to rotate along a circumferential direction with the rotation axis as a center when the stage rotating. The detector is provided at the second portion. The detector includes a first detection element configured to detect a first acceleration including a component along the second direction, and a second detection element configured to detect a second acceleration including a component along the first direction.

Sensor and movable body

According to one embodiment, a sensor includes a sensor element, a housing provided around the sensor element, and a processor. The sensor element includes a base body including first and second base body regions, and first and second sensor parts. The first sensor part is provided in the first base body region, and includes a first sensor movable part. The second sensor part is provided in the second base body region and includes first and second beams. The processor can derive a rotation angle and an angular velocity based on a signal obtained from the first sensor movable part. The processor can detect acceleration and a temperature based on a first resonance frequency of the first beam and a second resonance frequency of the second beam. The processor can correct one of the rotation angle or the angular velocity based on one of the temperature or the acceleration.

According to one embodiment, a sensor a sensor includes a base, a first support portion fixed to the base, and a first movable portion supported by the first support portion. The first movable portion includes first and second movable base portions, a connecting base portion, first and second movable beams, and first and second movable conductive portions. The first movable beam includes a first beam end portion, a first beam other end portion, and a first beam intermediate portion. The second movable beam includes a second beam end portion, a second beam other end portion, and a second beam intermediate portion. The first movable conductive portion includes a first crossing conductive portion, a first extending conductive portion, and a first other extending conductive portion. The second movable conductive portion includes a second crossing conductive portion, a second extending conductive portion, and a second other extending conductive portion.

A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Semiconductor device

A first through holeand a second through holeare formed which penetrate from a rear surfaceside of an element formation surfaceof a semiconductor substrate (silicon substrate) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation filmis formed on the side wall of the bottom of the second through holeto surround the outer circumference of the second through holehaving a larger opening diameter among these through holes.

Growing community of inventors

Oita, Japan

Kengo Uchida