Kabushiki Kaisha Tokai Rika Denki Seisakusho

Kabushiki Kaisha Toyota Chuo Kenkyusho

Kengo Shima

Kazuya Adachi

Narumasa Soejima

Takashi Suzuki

Junichi Matsubara

Satoki Uruno

Daisuke Aoki

Yosuke Kanie

Yoshikazu Kataoka

Yuichiro Mori

Natsuki Arakawa

Yuto Hakamata

An electrostatic protection element including: a first impurity layer of second conductivity type formed on a semiconductor substrate of first conductivity type; a second impurity layer of the first conductivity type formed within the first impurity layer; a first contact layer of the first conductivity type formed in a region within the first impurity layer other than at the second impurity layer; a second and a third contact layer both of the second conductivity type and formed within the second impurity layer; and multilayer wiring connected through a stack structure to the first, the second, and the third contact layer, wherein the stack structure includes at least a first layer wiring connected to each of the first, the second, and the third contact layer, and a second layer wiring connected to the first layer wiring directly above each of the first, the second, and the third contact layer.

Electrostatic protection element

A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.

Semiconductor integrated circuit

A semiconductor integrated circuit includes a constant-voltage circuit that outputs a constant voltage and a constant-current circuit. The constant-current circuit includes a first transistor. A voltage input as an input voltage to a first gate electrode of the first transistor is equal to the node voltage at an intermediate node in a connection path between the output of the constant-voltage circuit and an external resistor. A source region of the first transistor is connected to a fixed power supply, and a drain region of the first transistor is connected to the external power supply via a load. In the first transistor, a constant current can be made to flow between the source region and the drain region based on the input voltage. A constant-current drive system in which the semiconductor integrated circuit and the external resistor have been mounted on a circuit board is also constructed.

Circuit and constant-current drive system having adjustable constant current output

A protection device includes a semiconductor substrate including a protection element; an insulating layer covering a surface of the semiconductor substrate; a conductive layer disposed in the insulating layer, and extending in a plane that is parallel with the surface of the semiconductor substrate; a passive element formed with an elongated conductor, curved in a plane that is parallel with the conductive layer, and located over the conductive layer; and an input terminal, an output terminal, and a ground terminal exposed in a surface of the insulating layer. One end of the passive element is electrically connected to the input terminal, the other end of the passive element and a high-potential-side terminal of the protection element are electrically connected to the output terminal, and a low-potential-side terminal of the protection element and the conductive layer are electrically connected to the ground terminal.

Protection device

A signal processing device includes an input terminal configured to be input with an input signal that is active high or an input signal that is active low, a switching terminal connectable to a power supply or ground, a selection circuit configured to select and output the input signal that is active high in a case that the switching terminal is connected to the power supply and select and output the input signal that is active low in a case that the switching terminal is connected to the ground.

Signal processing device

A semiconductor device used in a protection circuit including a thyristor and an LCR circuit which includes a coil L, a capacitor C and a resistor R, the semiconductor device may include: a semiconductor layer in which the thyristor is provided; an insulating film provided on the semiconductor layer; and a pair of electrodes provided on the insulating film and connected to a protection target circuit, wherein at least one of the coil L, the capacitor C and the resistor R is provided in the insulating film, and the at least one of the coil L, the capacitor C and the resistor R is connected to an anode of the thyristor by a first metal wire filling a first hole provided in the insulating film.

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Aichi, Japan

Kengo Shima