Semiconductor Components Industries, LLC

Kengo Murase

Akinobu Onishi

Kazuyuki Kobayashi

Yasuhiro Hinokuma

A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors Mand Mserving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors Mand Mfrom overvoltage is formed including P-channel type MOS transistors Mand M. The P-channel type MOS transistor Mis a first protection transistor to protect the P-channel type MOS transistor Mfrom overvoltage, and is connected to a drain of the P-channel type MOS transistor M. The P-channel type MOS transistor Mis a second protection transistor to protect the P-channel type MOS transistor Mfrom overvoltage, and is connected to a drain of the P-channel type MOS transistor M

Growing community of inventors

Ora-gun, Japan

Kengo Murase