Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Kengo Inoue

Tamotsu Owada

Atsuo Shimizu

Hirofumi Watatani

Shun-ichi Fukuyama

Hiroyuki Ota

Hiroyuki Ohta

Satoshi Torii

Takashi Saiki

Hikaru Kokura

Katsuaki Ookoshi

Yuka Kase

Toshifumi Mori

Ryou Nakamura

Hideaki Matsumura

Shun-ichi Furuyama

Etsuro Kawaguchi

Hirofumi Watantani

A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.

Semiconductor device manufacturing method and semiconductor device

A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device

A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

Semiconductor device with shallow trench isolation and its manufacture method

A semiconductor device has a multi-layer interconnection structure with a first interlayer insulation film and a second interlayer insulation film that is formed on the first interlayer insulation film and has a hardness and an elastic modulus larger than those of the first interlayer insulation film, and is fabricated by a step of forming a resist film on the second interlayer insulation film via an antireflective film, a step of exposing to light and developing the resist film to form a resist pattern, and a step of patterning the antireflective film and the multi-layer interconnection structure using the resist pattern as a mask, wherein a film with no stress or for storing compressive stress is used as the antireflective film.

Method for fabricating a semiconductor device

A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface of the trench; (d) forming a second liner insulating layer of silicon nitride over the first liner insulating layer, the second liner insulating layer having a thickness of at least 20 nm or at most 8 nm; (e1) depositing a third liner insulating layer of silicon oxide over the second liner insulating layer by plasma CVD at a first bias; and (e2) depositing an isolation layer of silicon oxide by plasma CVD at a second bias higher than the first bias, the isolation layer burying a recess defined by the third liner insulating layer.

Manufacture of semiconductor device having STI and semiconductor device manufactured

A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Growing community of inventors

Kawasaki, Japan

Kengo Inoue