Hitachi Media Electronics Co., Ltd.

Hitachi, Ltd.

Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Renesas Electronics Corporation

Hitachi Denshi Kabushiki Kaisha

Kengo Asai

Atsushi Isobe

Hisanori Matsumoto

Hisayuki Takasu

Toru Iwaya

Mitsutaka Hikita

Hiroyasu Shichi

Nobuhiko Shibagaki

Kazuyuki Sakiyama

Ryo Suzuki

Hiroyuki Uchiyama

Tsutomu Tetsuka

Ryo Imura

Kunio Matsumoto

Akihisa Terano

Chisaki Takubo

Atsushi Sumioka

Shinichi Fujiwara

Kohji Oda

Yoshinori Hoshina

Tomio Iwasaki

Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathodethat is formed in a disc shape; a second cathodethat is formed in a disc shape and has an ion beam extraction holeprovided thereto; a first permanent magnetthat is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anodethat has a cylindrical regionand an extending regionprovided to one end of the cylindrical region; and an insulating materialthat keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

Ion gun and ion milling machine

An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Ion milling device

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

Ion milling apparatus

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/mto 191 kJ/m.

Ion milling device, ion source, and ion milling method

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gunthat includes a permanent magnetand that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shieldfor reducing a leakage magnetic field from the permanent magnetto the electron microscope column is provided.

Ion milling system

To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 &#x3bc;m to 350 &#x3bc;m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Ion milling device and ion milling method

Ion milling device, ion source and ion milling method

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrateS including an area ARon which an LDMOSFET is formed and an area ARon which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrateS.

Semiconductor device, manufacturing method of the same, and mobile phone

A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator

A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

Thin film tuning-fork type inflection resonator and electric signal processing element

Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness hand an aluminum nitride filmwith a thickness hare formed on that comb electrode and reflector, wherein:2.5&#x2266;/&#x3bb;&#x2266;8.5% is obtained.

Acoustic wave device and high-frequency filter using the same

The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

Growing community of inventors

Hachioji, Japan

Kengo Asai