Semiconductor Energy Laboratory Co., Ltd.

Kengo Akimoto

Shunpei Yamazaki

Masashi Tsubuku

Junichiro Sakata

Hidekazu Miyairi

Akiharu Miyanaga

Hideki Uochi

Shigeki Komori

Masayuki Sakakura

Toshinari Sasaki

Kojiro Shiraishi

Yoshiaki Oikawa

Tatsuya Honda

Takahiro Kasahara

Tomoya Futamura

Miyuki Hosoba

Toru Takayama

Norihito Sone

Masahiro Takahashi

Yusuke Nonaka

Atsushi Umezaki

Hideyuki Kishida

Takuya Hirohashi

Hideaki Kuwabara

Ryosuke Watanabe

Daisuke Kawae

Yoko Chiba

Rihito Wada

Hajime Kimura

Yasuo Nakamura

Satoshi Murakami

Tetsuji Yamaguchi

Hiroki Ohara

Suzunosuke Hiraishi

Takatsugu Omata

Takayuki Inoue

Hiroshi Kanemura

Hiromichi Godo

Takeshi Osada

Hironobu Takahashi

Yoshiharu Hirakata

Isamu Shigemori

Jun Koyama

Hisashi Ohtani

Hisao Ikeda

Masahiko Hayakawa

Yukinori Shima

Shingo Eguchi

Yuki Okamoto

Keiji Sato

Gen Fujii

Tetsunori Maruyama

Naoya Sakamoto

Masaharu Nagai

Hotaka Maruyama

Noriko Miyagi

Seiko Inoue

Misako Hirosue

Tatsuya Okano

Yutaka Matsuda

Hiroki Kayoiji

Koichiro Tanaka

Junichi Koezuka

Masaaki Hiroki

Yuta Endo

Teppei Oguni

Takahiro Fukutome

Yusuke Koumura

Daichi Mishima

Hiroyuki Miyake

Kenichi Okazaki

Hideto Ohnuma

Naoto Kusumoto

Masami Jintyou

Kosei Noda

Junpei Momo

Koji Dairiki

Shinji Maekawa

Hajime Tokunaga

Toru Mitsuki

Kunitaka Yamamoto

Takahiro Iguchi

Kentaro Hayashi

Koki Inoue

Shigeru Tamaki

Fumiya Nagashima

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Semiconductor device and manufacturing method thereof

An information processing system is provided. The information processing system includes first and second information processors. The first information processor obtains a first moving image including a face and detecting an eye from two or more first images among the first moving image. The first information processor detects a pupil from the eye detected from the first image, calculating its size, and performing learning using a change over time in the size of the pupil. The second information processor obtains a second moving image including a face and detecting an eye from two or more second images among the second moving image. The second information processor detects a pupil from the eye detected from the second image, calculating its size, and performing inference on the change over time in the size of the pupil on the basis of the result of the learning performed by the first information processor.

Information processor performing arithmetic operation using machine learning

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

The driving assistance system includes an imaging device capable of capturing a first monochrome image in a vehicle traveling direction, a first neural network for segmentation processing, a second neural network for depth estimation processing, a determination portion determining a center of a portion cut off from the first monochrome image on the basis of the segmentation processing and the depth estimation processing, a third neural network for colorization processing of only a second cut-off monochrome image, and a display device for enlargement of the second monochrome image subjected to the colorization processing.

Imaging system, driving assistance system, and program

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Display device comprising pixel portion and non-linear element including oxide semiconductor layer

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Semiconductor device

A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

Display device

An audio device capable of inhibiting malfunction of an information terminal is provided. The audio device includes a sound sensor portion, a sound separation portion, a sound determination portion, and a processing portion. The sound sensor portion has a function of sensing sound. The sound separation portion has a function of separating the sound sensed by the sound sensor portion into a voice and sound other than a voice. The sound determination portion has a function of storing the feature quantity of the sound. The sound determination portion has a function of determining, with a machine learning model such as a neural network model, whether the feature quantity of the voice separated by the sound separation portion is the stored feature quantity. The processing portion has a function of analyzing an instruction contained in the voice and generating an instruction signal representing the content of the instruction in the case where the feature quantity of the voice is the stored feature quantity. The processing portion has a function of performing, on the sound other than a voice separated by the sound separation portion, processing for canceling the sound other than a voice. Specifically, the processing portion has a function of performing, on the sound other than a voice, processing for inverting the phase thereof.

Audio device with sound determination

A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

Display device and electronic device

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<x<2, 0<y<2, and m=1 to 3 are satisfied).

Oxide semiconductor film and semiconductor device

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Display device and method for manufacturing the same

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An image retrieval system that enables high-accuracy image retrieval in a short time is provided. The image retrieval system includes a processing portion provided with a neural network. The neural network includes a layer provided with a neuron. The processing portion has a function of comparing query image data with a plurality of pieces of database image data, and extracting the database image data including an area with a high degree of correspondence to the query image data as extracted image data. The processing portion has a function of extracting data of the area with a high degree of correspondence to the query image data from the extracted image data, as partial image data. The layer has a function of outputting an output value corresponding to the features of the image data input to the neural network. The processing portion has a function of comparing the above output values in the case where the respective pieces of partial image data are input with the above output value in the case where the query image data is input.

Image retrieval system and image retrieval method

A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.

Data processing system and data processing method

With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

Growing community of inventors

Atsugi, Japan

Kengo Akimoto