Industrial Technology Research Institute

Keng-Li Lin

Chia-Liang Yeh

Mao-Sheng Huang

Fu-Cheng Yang

Wei-Hsiung Tsai

Yeou-Sung Lin

A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.

Growing community of inventors

Hsinchu, Taiwan

Keng-Li Lin