Epistar Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Keng-Chuan Chang

Chiu-Lin Yao

Wei-Chiang Hu

Chun-Wei Lin

Jung-Chang Sun

Shiu-Ko JangJian

Chia-Yang Wu

Ting-Siang Su

A light-emitting unit, having a substrate; a first light-emitting body formed on the substrate, and having a first longer side and a first shorter side; a second light-emitting body formed on the substrate, and having a second longer side and a second shorter side which is parallel to the first longer side; a third light-emitting body formed on the substrate, having a third longer side and a third shorter side which is parallel to the first longer side, and electrically connected to the first light-emitting body and the second light-emitting body; a first electrode covering the first light-emitting body and the second light-emitting body, and electrically connecting to the first light-emitting body; a second electrode separated from the first electrode, and covering the second light-emitting body without covering the first light-emitting body; and a transparent element enclosing the first light-emitting body, the second light-emitting body, and the third light-emitting body.

Lighting apparatus

A lighting apparatus comprises: a board, a plurality of light-emitting units disposed on the board, and a package structure enclosing all of the light-emitting units and having a volume less than 5000 mm3. The lighting apparatus has a light intensity greater than 150 lumens.

A device includes a source/drain (S/D) in a substrate and adjacent to a gate structure, wherein the S/D comprises a protrusion extending from a top surface of the S/D, and the protrusion has a tapered profile. The device further includes a contact plug electrically connected to the protrusion.

Semiconductor device having source/drain with a protrusion

A lighting apparatus comprises: a board, a plurality of light-emitting units disposed on the board, and a package structure enclosing all of the light-emitting units and having a volume less than 5000 mm. The lighting apparatus has a light intensity greater than 150 lumens.

A method of forming a semiconductor device includes depositing a titanium-containing material over a source/drain (S/D), wherein an energy of depositing the titanium-containing material is sufficient to cause re-deposition of a material of the S/D along sidewalls of a dielectric layer adjacent the S/D to form protrusions extending from a top surface of the S/D. The method further includes annealing the semiconductor device to form a silicide layer in the S/D and in the protrusions.

Method of forming semiconductor device using titanium-containing layer and device formed

A method of forming a semiconductor device includes etching an inter-layer dielectric (ILD) to form a contact opening exposing a portion of a source/drain (S/D). The method further includes depositing a titanium-containing material into the contact opening, wherein an energy of depositing the titanium-containing material is sufficient to cause re-deposition of a material of the S/D along sidewalls of the ILD to form protrusions extending from a top surface of the S/D. The method further includes annealing the semiconductor device to form a silicide layer in the S/D and in the protrusions.

Growing community of inventors

Hsinchu, Taiwan

Keng-Chuan Chang