Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Kenetsu Yokogawa

Masaru Izawa

Masahito Mori

Kenji Maeda

Hiroyuki Kobayashi

Shinichi Tachi

Takao Arase

Tadamitsu Kanekiyo

Tooru Aramaki

Masakazu Isozaki

Yoshinori Momonoi

Takumi Tandou

Tatehito Usui

Takamasa Ichino

Nobuyuki Negishi

Taku Iwase

Tomoyuki Watanabe

Naoyuki Kofuji

Makoto Satake

Yutaka Kouzuma

Tomoyuki Tamura

Kazunori Shinoda

Nobuya Miyoshi

Takahisa Hashimoto

Yuusuke Takegawa

Masaki Yamada

Hiroshi Ito

Yoshimi Kawanami

Ryoji Nishio

Kazunori Tsujimoto

Yuki Kondo

Tsutomu Tetsuka

Tatsumi Mizutani

Hirotaka Hamamura

Michikazu Morimoto

Kazunori Nakamoto

Tadayoshi Kawaguchi

Tsuyoshi Matsumoto

Satoshi Une

Masatoshi Miyake

Tsuyoshi Yoshida

Satoshi Sakai

Seiji Yamamoto

Satoru Muto

Kenji Ishikawa

Masaru Hori

Yousuke Sakai

Junichi Sayama

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Plasma processing apparatus

Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.

Etching method

A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

Plasma processing method

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

Plasma processing apparatus and plasma processing method

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Plasma processing device

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatusincludes a first electrode (a base materialB) disposed in a sample stage, a ring-shaped second electrode (a conductive ring) disposed surrounding an outer peripheral side of an upper surface portion(a dielectric film portionA) of the sample stage, a dielectric ring-shaped member (a susceptor ring) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching devicedisposed on a power supply path to the second electrode. Further, a first position (A) and a grounding position between the second electrode and the matching deviceon the power supply path to the second electrode are electrically connected via a resistorhaving a predetermined value.

A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

Wafer processing method and wafer processing apparatus

The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatushas a susceptor ringcovering the surface of a sample stage, a conductor ringdisposed in the interior of the susceptor ringand to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connectorconfiguring a path for supplying the second high frequency electric power to the conductor ring. Further, the electric power supply connectorincludes a plate springdisposed in the interior of an insulating bossdisposed in a through holeof the sample stage and having resiliency in such a manner that the plate springis connected to an upper terminaland a lower terminal, is biased in an up-down direction P, and is expanded and contracted.

A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

Growing community of inventors

Tsurugashima, Japan

Kenetsu Yokogawa