Globalfoundries Inc.

Kendra A Lyons

Stephen Peter Ayotte

John Chester Malinowski

Nicholas G Clore

Andrew H Norfleet

Jared P Yanofsky

Benjamin J Pierce

Alissa R Cote

According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.

Determining thermal profiles of semiconductor structures

A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack.

Self-healing crack stop structure

Growing community of inventors

Westminster, CO, United States of America

Kendra A Lyons