Hitachi, Ltd.

Hitachi-high-technologies Corporation

Other

Hitachi Engineering Co., Ltd.

Ken Yoshioka

Ryoji Nishio

Saburou Kanai

Manabu Edamura

Hideyuki Kazumi

Yoshinao Kawasaki

Minoru Soraoka

Saburo Kanai

Tsunehiko Tsubone

Seiichiro Kanno

Kenji Maeda

Hideki Kihara

Yutaka Ohmoto

Kazue Takahashi

Hironobu Kawahara

Masatsugu Arai

Tsutomu Tetsuka

Tatsumi Mizutani

Takafumi Tokunaga

Akira Doi

Koji Okuda

Tatehito Usui

Motohiko Yoshigai

Sadayuki Okudaira

Go Miya

Tadamitsu Kanekiyo

Kazutami Tago

Masaru Izawa

Tokuo Kure

Tetsuo Ono

Masayuki Kojima

Tetsunori Kaji

Yasushi Goto

Takashi Sato

Naoyuki Kofuji

Tadasi Sonobe

Youichi Itou

Teruhiro Takizawa

Fumio Suzuki

Yasuhiro Nishimori

Hideyuki Yamamoto

Masayuki Shibata

Yutaka Kouzuma

Takahiro Shimomura

Hideshi Fukumoto

Mamoru Yakushiji

Hiromichi Kawasaki

Yoko Kameoka

Takashi Kobayashi

Masahiro Nozaki

Kouji Nishihata

Moriaki Fuyama

Makoto Koizumi

Tomohiro Okada

Shoji Ikuhara

Shigeru Nakamoto

Kazuyuki Ikenaga

Akitaka Makino

Takahiro Abe

Naoki Maki

Hiromitsu Nagae

Mitsuru Suehiro

Go Saito

Hitoshi Harata

Yusaku Sakka

Hiroaki Ishimura

Tadayoshi Kawaguchi

Toshio Saitoh

Ryoichi Koshida

Nobuyuki Mise

Shigeru Sakamoto

Fumihiko Goto

Yoshimi Torii

Naoki Kasahara

Takayuki Terasawa

Makoto Onisawa

Takehito Usui

A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Plasma processing apparatus and plasma processing method

The invention provides a plasma processing apparatus in which ring-like conductorsandare arranged closed to and along an induction antennacomposed of an inner circumference coiland an outer circumference coil. Ring-like conductorsandare each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductorsandand the induction antennaand between the ring-like conductorsandand the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.

Plasma processing apparatus

The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

Plasma processing apparatus and method

A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360&#xb0; by the number of identical coil elements.

A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.

Manufacturing method in plasma processing apparatus

A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamberwhich performs plasma processing on an object to be processed, a first processing gas supply source, a second processing gas supply source, a first gas inlet-which introduces a processing gas into the processing chamber, second gas inlets-which introduce the processing gas into the processing chamber, flow rate regulatorsandwhich regulate the flow rate of the processing gas and a gas shuntwhich divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shuntare provided with the first gas inlet-or second gas inlets-and merging sections-and-are provided between the shuntand the first gas inlet-and between the shuntand the second gas inlets-for merging the second processing gas.

Apparatus and method for plasma etching

A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.

Plasma processing method

A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage.

A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about &#xbd; or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.

A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.

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Hikari, Japan

Ken Yoshioka