Taiwan Semiconductor Manufacturing Comp. Ltd.

Ken-Ying Liao

Po-Zen Chen

Huai-jen Tung

Yen-Jou Wu

Chih-Wei Sung

Tzu-Pin Lin

Yung-Lung Yang

A semiconductor device includes a memory region including an array of memory cell devices, and a test region including a test memory cell structure. The test memory cell structure includes a first gate stack on a first raised portion of a substrate, a first polysilicon structure adjacent to the first raised portion and in a region between the first raised portion and a second raised portion of the substrate, a first spacer adjacent to the first polysilicon structure, and a second gate stack on the second raised portion, a second polysilicon structure adjacent to the second raised portion and in the region between the first raised portion and the second raised portion, and a second spacer adjacent to the second polysilicon structure. The semiconductor device includes an interlayer dielectric layer over at least a portion of the memory region and at least a portion of the test region.

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Tainan, Taiwan

Ken-Ying Liao