TSMC Solid State Lighting Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Ken Wen-Chien Fu

Hung-Yi Kuo

Fu-Chih Yang

Chih-Kuang Yu

Hung-Chao Kao

Ming-Feng Wu

Shouli Steve Hsia

Dun-Nian Yaung

Chun-Chieh Chuang

Chin-Min Lin

Kuan-Chieh Huang

Chih-Min Lin

Ke Chun Liu

Mingo Lin

A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

LED structure

An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.

Forming sensing elements above a semiconductor substrate

A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

Method and structure to reduce dark current in image sensors

LED structure having embedded zener diode

Growing community of inventors

Hsinchu, Taiwan

Ken Wen-Chien Fu