Nec Corporation

Ken Tokashiki

Eiichi Soda

Kiyoyuki Sato

A method for forming interconnects of a semiconductor device in which an amount of the fluorocarbon-based gas in an etching gas is adjusted to form a side-wall film which has a film thickness not less than a critical film thickness. In the present invention, the damage of a gate electrode and a gate dielectric film, due to charging imbalance caused by an electron shading effect during the etching of an interconnect layer, can be prevented.

Method for forming interconnects in semiconductor device

There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHz, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 &mgr;sec, and (a4) pulse-on time is equal to or greater than 50 &mgr;sec, and (b) patterning multi-layered metal wirings by etching through the plasma The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.

Apparatus for fabricating a semiconductor device and method of doing the same

A method of manufacturing a semiconductor device containing a ruthenium oxide includes the step of dry-etching the ruthenium oxide using a gas mixture containing oxygen or ozone gas and at least one material selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, a halogen gas containing at least one of the fluorine, chlorine, bromine, and iodine gases, and a hydrogen halide.

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Tokyo, Japan

Ken Tokashiki