Mitsubishi Electric Corporation

Ken Sakamoto

Taketoshi Shikano

Hiroshi Kawashima

Satoshi Kondo

Keitaro Ichikawa

Kozo Harada

Tetsuya Ueda

Taishi Sasaki

Takamasa Iwai

Haruko Hitomi

Hiroshi Yoshida

Mitsugu Tanaka

Junji Fujino

Seiji Oka

Seiki Hiramatsu

Yuki Yoshioka

Kazuo Funahashi

Yoshihiro Takai

Claudio Feliciani

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

Semiconductor module and power conversion apparatus

The third side surface includes inclined surfaces inclined in a direction in which a center in an up-down direction of the third side surface is convex. The mold resin further includes a residual section provided in the center of the third side surface and a dowel section provided between the inclined surface and the residual section. The dowel section projects further in a lateral direction than the inclined surface. The residual section further projects in the lateral direction than the dowel section and has a fracture surface perpendicular to the up-down direction.

Semiconductor device and method of manufacturing the same

The conductive wire is bonded to the front electrode of the semiconductor device at the bonding section. The first resin member covers at least one end portion of two end portions of the bonding section, the first surface of the front electrode, and the second surface of the conductive wire. The second resin member covers the bent portion of the first resin member. The first resin member has a higher break elongation and a higher break strength than the second resin member. The second tensile elastic modulus of the second resin member is greater than the first tensile elastic modulus of the first resin member. Thereby, the reliability of the power semiconductor module is improved.

Power semiconductor module and power converter

A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

Method for manufacturing semiconductor device

A lead frame () includes an inner lead (), an outer lead () connected to the inner lead (), and a power die pad (). A power semiconductor device () is bonded onto the power die pad (). A first metal thin line () electrically connects the inner lead () and the power semiconductor device (). Sealing resin () seals the inner lead (), the power die pad (), the power semiconductor device (), and the first metal thin line (). The sealing resin () includes an insulating section () directly beneath the power die pad (). A thickness of the insulating section () is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (). A first hollow () is provided on an upper surface of the sealing resin () directly above the power die pad () in a region without the first metal thin line () and the power semiconductor device ().

Power semiconductor apparatus and manufacturing method therefor

A heat sink () having a step in a bottom surface corner and a rectangular planar shape is disposed in an interior of a cavity () of a metal mold () and a first pin () is caused to project from a bottom surface of the cavity () to position the heat sink (). A second pin () projecting from the bottom surface of the cavity () is disposed at the step of the positioned heat sink (). After the heat sink () is positioned, the first pin () is lowered to the bottom surface of the cavity () and the heat sink () is sealed with the mold resin () with the second pin () being left projecting.

It is an object of the present invention to provide a method for manufacturing a resin-sealed power semiconductor device that facilitates the separation of a suspension lead from a mold resin and a lead frame. A method for manufacturing a resin-sealed power semiconductor device according to the present invention includes the following steps: (a) sealing a semiconductor element and a lead frame, to prepare a sealed body in which a terminal lead and a suspension lead that are included in the lead frame project outward from a side of the mold resin; (b) punching a portion of the suspension lead, the portion projecting from the mold resin, with a first punch in a first direction, to separate the suspension lead from the mold resin; and (c) punching the projecting portion of the suspension lead with a second punch in a second direction.

Method for manufacturing resin-sealed power semiconductor device

Lead frame and method for manufacturing semiconductor device

An object is to provide a technology that reduces the number of components and that is capable of suppressing the cost. A structure including semiconductor elements, a plurality of electrode terminals, and a dam bar for connecting the plurality of electrode terminals is prepared, and a part of the structure including a part of the plurality of electrode terminals and the dam bar is arranged in the terminal hole. Further, the part of the structure is clamped by a movable clamp inside the terminal hole, and at least a portion of the movable clamp is fitted into the terminal hole, and then a resin is injected into an internal space of a pair of molds.

Manufacturing method for semiconductor device

A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.

Semiconductor device

A lead frame includes a plurality of circuit patterns which each have a die pad and an electrode terminal portion and are disposed in a band shape, a tie bar, a frame portion and a suspension lead. Cut are a connection portion between electrode terminals and the frame portion, a connection portion between the frame portion and the tie bar at both end portions in a disposition direction of circuit patterns, and a connection portion from a connection part of the frame portion with the tie bar, between the circuit patterns to a part of the frame portion extending in the disposition direction. The electrode terminal portion is bent to extend to a direction of an upper surface of a semiconductor element. The lead frame is collectively resin-sealed while exposing the tie bar and the electrode terminal portion above the tie bar.

Semiconductor device and manufacturing method thereof

It is an object to provide a method for manufacturing a semiconductor device which can reduce degradation in package strength and a manufacturing cost, and promote miniaturization of a package. A method for manufacturing a semiconductor device includes steps of (a) preparing a lead frame having a die pad on which a semiconductor element is mounted, (b) placing a first resin which is granular in a mold, (c) placing the lead frame in the mold in such a manner that the first resin comes into contact with a lower side of the die pad, (d) filling the mold with a second resin on an upper side of the first resin in the mold, and (e) curing the first resin and the second resin, to mold the first resin and the second resin.

In the present invention, a heat spreader has a sagging surface or a C surface being a chamfered portion at an outer peripheral end portion of a back surface thereof. A plurality of power elements formed into chips are mounted on a surface of the heat spreader with a solder therebetween, and an insulating sheet portion is located on the back surface side of the heat spreader. The insulating sheet portion has a laminated structure of an insulating layer and a metal foil, and the insulating layer being the upper layer is closely bonded to the back surface of the heat spreader. A space region between the sagging surface and the insulating sheet portion is filled with a molding resin.

Semiconductor device and manufacturing method for same

A power semiconductor device includes a power semiconductor element, a controlling element, a first lead frame and a second lead frame, respectively, a first metal wire electrically connecting the power semiconductor element and the first lead frame, and a sealing body covering these components. The first lead frame includes a first inner lead having a connecting surface to which one end of the first metal wire is connected. Among surfaces of the sealing body, in a side surface, a resin inlet mark is formed in a side surface portion from which the first lead frame and the second lead frame do not project, the resin inlet mark being greater in surface roughness than another area. The resin inlet mark is formed opposite to a side where the first metal wire is positioned on the connecting surface when seen in the direction along the mounting surface.

Power semiconductor device and method for manufacturing the same

A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element.

Growing community of inventors

Tokyo, Japan

Ken Sakamoto