Micron Technology Incorporated

Motorola Corporation

Elpida Memory, Inc.

Nec Corporation

Ps4 Luxco S.a.r.l.

Fine Arc Incorporated

Ken Ota

William C Archibald

Tomoko Nobutoki

Kim H Eckert

Yuki Miura

Tomohiro Kitano

Mamoru Nishizaki

Robert Wayne Sparks

Saaya Izumi

Toshiyuki Kochi

Microelectronic devices may include first bond pads located proximate to, and distributed along, a first side of the microelectronic device. Other bond pads may be located proximate to, and distributed along, another side of the microelectronic device perpendicular to the first side. A first pitch of the first bond pads may be greater than another pitch of the other bond pads. When microelectronic devices are placed side by side, the bond pads on sides of the microelectronic devices proximate to one another may be interposed between one another in the direction parallel to the first shortest distance between adjacent first bond pads.

Techniques for positioning bond pads of microelectronic devices and related microelectronic devices, methods, and systems

Disclosed herein is an apparatus that includes: first and second memory groups including a plurality of first and second memory cells, respectively; a first buffer circuit configured to receive a plurality of first data bits from the first memory group; a second buffer circuit configured to receive a plurality of second data bits from the second memory group; a first error correction circuit configured to correct at least one of the plurality of first data bits; and a second error correction circuit configured to correct at least one of the plurality of second data bits. The first error correction circuit is arranged between the first and second buffer groups of the first buffer circuit in physical layout. The second error correction circuit is arranged between the third and fourth buffer groups of the second buffer circuit in physical layout.

Semiconductor device having buffer circuit

Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes: a connection wiring of a ring-shape having comprising a hole and a conductive layer surrounding the hole, the conductive layer including a first connection point and a second connection point that are located so that a straight line between the first connection point and the second connection point crosses over the hole; an external terminal coupled to the first connection point of the conductive layer of the connection wiring; and an internal circuit coupled to the second connection point of the conductive layer of the connection wiring.

Wiring with external terminal

Disclosed herein is an apparatus that includes: a first conductive layer having a first common pattern and a plurality of first branch patterns arranged in a first direction, one end of each of the first branch patterns being connected to the first common pattern; a second conductive layer having a second common pattern and a plurality of second branch patterns arranged in the first direction, one end of at least one of the second branch patterns being connected to the second common pattern; an insulating layer formed between the first and second conductive layers; and a plurality of via electrodes penetrating through the insulating layer, other end of each of the first branch patterns being connected to an associated one of other end of each of the second branch patterns.

Semiconductor device having equivalent series resistance unit

Embodiments of the disclosure are drawn to apparatuses and methods for arranging configurable logic circuits such that the configurable logic circuit may be configured to form one or more of several logic circuits by coupling a combination of nodes included in the logic circuit. Configuring the configurable logic circuit may include modification of a single wiring layer.

Apparatuses and methods including configurable logic circuits and layout thereof

An output circuit includes first, second and third transistors. The first transistor includes first and second diffusion layers. The third transistor includes third and fourth diffusion layers. The first transistor shares the second diffusion layer with the second transistor and the third transistor shares the third diffusion layer with the second transistor. The second transistor is rendered conductive responsive to an activation of a first signal and non-conductive responsive to an inactivation of the first signal. The first and third transistors are rendered conductive responsive to an activation of a second signal that is different from the first signal and rendered non-conductive responsive to an in activation of the second signal.

Semiconductor apparatus including output buffer

A semiconductor device has at least a first capacitor and a second capacitor. First electrodes of the first and second capacitors are connected in common, a first voltage (&#xbd; VPERI) is applied to the first electrodes, a second voltage (for example, VPERI) that is different from the first voltage is applied to either one of the second electrodes, and the first voltage is applied to the other second electrode. A capacitor which constitutes a dummy capacitance is provided by applying one of the second electrodes of the first and second capacitors with the same voltage as the voltage applied to their first electrodes, whereby making it possible to increase the area of the compensation capacitance in the semiconductor device without changing a specified capacitance value.

Semiconductor device

In a semiconductor memory device which includes a shared sense amplifier portion, a pair of memory cell portions disposed on opposite sides of the shared sense amplifier portion, a pair of transfer gates between the pair of memory cell portions and the shared sense amplifier portion, and bit lines constituting a plurality of bit line pairs and connecting the pair of memory cell portions to each other through the pair of transfer gates and the shared sense amplifier portion, the bit lines in a bit line pair of the plurality of bit line pairs are twisted at a substantial center between the pair of transfer gates on the opposite sides.

Semiconductor memory device

The compensation capacitor includes: a charge accumulating element having a diffusion layer, a dielectric layer, and a gate electrode layer, wherein the gate electrode layer, the dielectric layer, and the diffusion layer are stacked in this order, and at least partially overlap with each other when viewed from a direction of stacking; a metal layer for applying a voltage to the diffusion layer, the metal layer being formed above the charge accumulating element; and a contact for electrically connecting the diffusion layer and the metal layer, the contact extending between the diffusion layer and the metal layer in the direction of stacking. The gate electrode layer has a form of a mesh which extends in a direction which is perpendicular to the direction of stacking. The contact extends through an aperture of the mesh of the gate electrode layer.

Semiconductor device having a compensation capacitor in a mesh structure

A program counter having an independent context for each virtual processor is provided, and a non-native instruction fetched from a main memory based on address information generated by the program counter is classified by property by an instruction classifying unit. Then an instruction merge information memory is read out utilizing address information prescribed for each classified group as reference address, and native execution control information is merged and executed. Selection and switching of the virtual processor is performed through selectively switching the instruction classifying unit and an active portion of the instruction merge information memory, and the switching timing is appropriately adjusted by synchronizing with a switching enabling signal output from the instruction merge information memory.

Data processor with changeable architecture

In a fuzzy inference system using a plurality of output label membership functions mBi(y), each of which is represented by a singleton having a position yi and a consequent grade gi, a defuzzifying method comprising the steps of: selecting and identifying n singletons in magnitude order of the consequent grade as g1, g2, . . . , gn (g1 is the highest); and obtaining the center of gravity y0 as the final result of defuzzification, by calculating the following approximate equation (n=2, 3, . . . )

Growing community of inventors

Tokyo, Japan

Ken Ota