Sumitomo Electric Industries, Limited

Sumitomo Electric Device Innovations, Inc.

Osaka University

Koken Company, Limited

Ken Nakata

Isao Makabe

Keiichi Yui

Tsuyoshi Kouchi

Takamitsu Kitamura

Seiji Yaegashi

Hiroyuki Ichikawa

Akira Furuya

Masaya Okada

Gaku Kanno

Makoto Kiyama

Kanae Kasai

Makato Kiyama

Tsuyoshi Kouichi

To provide a collagen sponge excellent in mechanical strength and a production method for the collagen sponge. A collagen sponge including a porous construct having a pore structure, the collagen sponge having a tensile strength of 1 N or more and 5 N or less in every direction including a length direction and a width direction. The collagen sponge may be produced by a production method including the following steps: (1) a step of subjecting a collagen solution obtained by mixing collagen and a solvent to stirring and deaeration treatment; (2) a step of subjecting the collagen solution to freeze-dry treatment; and (3) a step of subjecting a dried collagen product after the freeze-dry treatment to insoluble treatment.

High-strength collagen sponge

A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using Has a carrier gas, and TMG and NHas raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using Has a carrier gas, the MOCVD furnace being supplied with NH, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using Nas a carrier gas, and TMI, TMA, and NHas raw materials.

Method for manufacturing nitride semiconductor device

A high electron mobility transistor (HEMT) made of primarily nitride semiconductor materials is disclosed. The HEMT, which is a type of reverse HEMT, includes, on a C-polar surface of a SiC substrate, a barrier layer and a channel layer each having N-polar surfaces in respective top surfaces thereof. The HEMT further includes an intermediate layer highly doped with impurities and a Schottky barrier layer on the channel layer. The Schottky barrier layer and a portion of the intermediate layer are removed in portions beneath non-rectifying electrodes but a gate electrode is provided on the Schottky barrier layer.

High electron mobility transistor with reverse arrangement of channel layer and barrier layer

A process of forming a field transistor (FET) and a FET are disclosed. The FET includes a nitride semiconductor stack on a substrate. A pair of n-regions made of oxide semiconductor material are provided within respective recesses in the semiconductor stack. Protecting layers, each made of oxide material, cover peripheries of the n-regions. Electrodes are provided in openings in the protecting layers to be in direct contact with the n-regions.

Field effect transistor and process of forming the same

A process of forming a field effect transistor (FET) and a FET are disclosed. The process includes steps of forming a nitride semiconductor layer on a substrate; selectively growing an n-region made of oxide semiconductor material on the nitride semiconductor layer and subsequently depositing oxide film on the n-region; rinsing the oxide film with an acidic solution; forming an opening in the oxide film to expose the oxide semiconductor layer therein; and depositing a metal within the opening such that the metal is in direct contact with the n-region.

A process of forming a HEMT that makes the contact resistance of a non-rectifying electrode consistent with other device performance is disclosed. The process includes steps of growing a GaN channel layer with a thickness smaller than 600 nm on a SiC substrate at a growth temperature lower than 1050&#xb0; C. and growing an AlN spacer layer with a flow rate of NHat most 10% smaller than a summed flow rate of NHand H. The grown GaN channel layer includes a substantial density of threading dislocations and the grown AlN layer includes a substantial density of pits.

Nitride semiconductor device and process of forming the same

A HEMT made of nitride semiconductor materials and a process of forming the same are disclosed, where the HEMT has n-type regions beneath the source and drain electrodes with remarkably increased carrier concentration. The HEMT provides the n-type regions made of at least one of epitaxially grown ZnO layer and MgZnO layer each doped with at least aluminum and gallium with density higher than 1&#xd7;10cm. The process of forming the HEMT includes steps of forming recesses by dry-etching, epitaxially growing n-type layer, removing surplus n-type layer except within the recesses by dry-etching using hydrocarbon, and forming the electrodes on the n-type layer.

Hemt having heavily doped N-type regions and process of forming the same

A process of forming a High Electron Mobility Transistor (HEMT) is disclosed. The HEMT includes a substrate, a channel layer, a barrier layer, and heavily doped regions made of metal oxide. The channel layer and the barrier layer provide recesses and a mesa therebetween. The heavily doped regions are formed by partially removing portions of a heavily doped layer on the mesa so as to have slant surfaces facing the gate electrode. The slant surfaces make angle of 135&#xb0; to 160&#xb0; relative to the top horizontal level of the mesa.

Process of forming a high electron mobility transistor (HEMT)

A process of forming a High Electron Mobility Transistor (HEMT) made of nitride semiconductor materials is disclosed. The process sequentially grows a buffer layer, a n-type layer doped with n-type dopants, and a channel layer by a metal organic chemical vapor deposition (MOCVD) technique. A feature of the process is to supply only an n-type dopant gas before the growth of the n-type layer but after the growth of the buffer layer.

Process for forming a high electron mobility transistor

A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.

High electron-mobility transistor

A carrier for cell cultivation having stress of 10-30 kPa at 10% load, preparing a material, which has physical property similar to cartilage tissue of vivo, by lyophilization using high concentrated collagen dispersion, solution or mixture thereof as a starting material, then performing insolubilizing treatment to regulate physical strength and absorption speed in a living body.

Carrier for cultivation of cells

A HEMT made of nitride semiconductor materials is disclosed. The HEMT includes the GaN channel layer, the InAlN barrier layer, and the n-type GaN regions formed beneath the source electrode and the drain electrode at a temperature such that the InAlN barrier layer in the crystal quality thereof is not degraded, lower than 800&#xb0; C. The n-type GaN regions are doped with silicon (Si) and have a ratio of silicon atoms against carbon atoms (Si/C) greater than 100.

Growing community of inventors

Yokohama, Japan

Ken Nakata