Tokyo Electron Limited

Tel Sagami Limited

Tokyo Electron Sagami Limited

Other

Kabushiki Kaisha Toshiba

Toshiba Ceramics Co., Ltd.

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Tohoku Kabushiki Kaisha

The Japan Steel Works, Ltd.

Nichias Corporation

Toyo Tanso Co., Ltd.

Covalent Materials Corporation

Tokyo Electron Sagami Kabushiki Kaisha

Ken Nakao

Takanori Saito

Norihiko Saito

Tomio Konn

Tomohiro Nagata

Eiichi Toya

Kenichi Yamaga

Makoto Kobayashi

Wataru Ohkase

Hisaei Osanai

Toshiyuki Makiya

Seishiro Sato

Hiroyuki Honma

Sunao Seko

Hitoshi Kato

Keitaro Imai

Kikuo Yamabe

Shigeru Yamamura

Hideyuki Yokoyama

Katsuya Okumura

Tsuneyuki Okabe

Muneo Harada

Takanobu Asano

Yoshiyuki Motoyoshi

Kazutoshi Miura

Harunari Hasegawa

George Hoshi

Yoshihisa Miyahara

Seiji Sakurai

Tsutomu Haraoka

Seikou Ueno

Hiroshi Mori

Akira Otsu

Katsutoshi Ishi

Masakazu Kobayashi

Hiroyuki Matsuura

Tetsuro Tojo

Katsuhiro Yamashita

Shuji Moriya

Reiji Niino

Junichi Hagihara

Tomohisa Shimazu

Kazuhiko Kato

Shingo Watanabe

Takashi Tanahashi

Jiro Hiraiwa

Shigeyuki Okura

Hiroyuki Iwai

Osamu Yoshimoto

Tetsu Ohsawa

Yoshiyuki Fujita

Takeshi Inaba

Hisashi Kikuchi

Eiji Yamaguchi

Itaru Iida

Masahiko Ichishima

Hiroshi Hayakawa

Sohei Masaki

Naoya Kaneda

Kazuhiko Shimanuki

Yoshio Sakamoto

Shigeaki Sano

Sadao Maruchi

Seiko Ueno

Shinichi Wada

Hiroshi Kumada

Hiroaki Ikegawa

Tomoyuki Ohbu

Keiji Takano

Kouji Teraoka

Kunihiro Hijikata

Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.

Method for manufacturing semiconductor device

A thermal processing furnace comprises: a tubular heat insulation membersurrounding a processing vesselfor receiving and thermally processing an object to be processed w; a heating resistorhelically arranged on an inner circumferential surface of the heat insulation member; and a support memberdisposed on the inner circumferential surface of the heat insulation member, the support membersupporting the heating resistorsuch that the heating resistorcan be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention memberdisposed on the heating resistorto be in contact with one side surface of the support memberso as to prevent a downward movement of the heating resistor

Thermal processing furnace

A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.

Film forming apparatus and film forming method

Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

Semiconductor manufacturing plant

A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.

Vaporizer and semiconductor processing system

The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatusincludes: a support partwhich is moved above a substrate w of a large diameter; and an upside grip mechanismdisposed on the support part, the upside grip mechanismcapable of supporting a peripheral portion of the substrate w from above. The support partis provided with a non-contact sucking and holding parthaving a suction holeand a blow hole. The non-contact sucking and holding partsucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layersuch that the central portion of the wafer w is not warped.

Substrate transfer apparatus and vertical heat processing apparatus

A heat processing furnace comprises: a processing vessel for receiving an object to be processed by a heat process; a cylindrical heat insulation member surrounding the processing vessel; a helical heating resistor arranged along an inner peripheral surface of the heat insulation member; a support member for supporting the heating resistor. The support member includes a base part positioned on an inside of the heating resistor, and a plurality of support pieces extending radially outward from the base part through spaces between adjacent portions of the heating resistor so as to support the heating resistor, the support member being formed to have a comb-like shape. An upper surface part of each of the support pieces is formed to have a curved shape in order to reduce a frictional resistance generated when the heating resistor is moved upon a thermal expansion and a thermal shrinkage thereof.

Heat processing furnace and method of manufacturing the same

The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other.

Heat processing apparatus

A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.

Heat-processing furnace and manufacturing method thereof

A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.

Gas supply system for semiconductor manufacturing apparatus

The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.

Substrate processing apparatus and substrate processing method

It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection platefor semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plateof inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one sidehaving a surface roughness of Ra 0.1 to 10.0 &#x3bc;m, said at least one sideformed groovestherein.

Reflection plate for semiconductor heat treatment and manufacturing method thereof

The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.

Heat treatment apparatus

Two rotorseach housing a honeycomb structurecarrying an absorbent is driven for rotation by a common motor. Partitioning membersdefine an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning membersand the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer spaceof the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage, and is heated by a heater, and passes through the recovery zones of both the rotors.

Dry air-supplying apparatus and treating apparatus

A single-substrate heat-processing apparatus () for a semiconductor processing system includes a process container () configured to accommodate a target substrate (W). A support member () is disposed in the process container () and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section () is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member () is disposed within a flow passage of the heating gas supplied from the heating gas supply section (), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).

Single-wafer type heat treatment apparatus for semiconductor processing system

Growing community of inventors

Sagamihara, Japan

Ken Nakao