Hewlett-packard Development Company, L.p.

Ken Kramer

Peter James Fricke

Kurt M Ulmer

Heon Lee

Andrew Koll

Neal W Meyer

Dennis M Lazaroff

Andy Van Brockin

Jim Ellenson

David Pursalan

The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.

Phase change material electronic memory structure and method for forming

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Corvallis, OR, United States of America

Ken Kramer